TCA0372DW ON Semiconductor, TCA0372DW Datasheet - Page 3

• Manufacturer Part Number: TCA0372DW
• Description: IC OPAMP DUAL POWER 1A 16SOIC
• Manufacturer: ON Semiconductor

Specifications of TCA0372DW

• Amplifier Type: General Purpose
• Number Of Circuits: 2
• Slew Rate: 1.4 V/µs
• Gain Bandwidth Product: 1.4MHz
• Current - Input Bias: 100nA
• Voltage - Input Offset: 1000µV
• Current - Supply: 5mA
• Current - Output / Channel: 1A
• Voltage - Supply, Single/dual (±): 5 V ~ 40 V, ±2.5 V ~ 20 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Output Type: -
• -3db Bandwidth: -
• Other names: TCA0372DWOS

NOTE: In case V
DC ELECTRICAL CHARACTERISTICS
AC ELECTRICAL CHARACTERISTICS
Input Offset Voltage (V
Average Temperature Coefficient of Offset Voltage
Input Bias Current (V
Input Offset Current (V
Large Signal Voltage Gain
Output Voltage Swing (I
Output Voltage Swing (I
Input Common Mode Voltage Range
Common Mode Rejection Ratio (R
Power Supply Rejection Ratio (R
Power Supply Current
Slew Rate (V
Gain Bandwidth Product (f = 100 kHz, C
Phase Margin T
Gain Margin
Equivalent Input Noise Voltage
Total Harmonic Distortion
T
T
V
T
T
T
T
V
V
V
V
T
T
T
T
A
T
T
R
R
R
A
A
A
A
A
A
A
A
A
A
A
A
A
V
V
O
CC
CC
CC
CC
L
L
S
, T
= +25°C
= +25°C
= T
= +25°C
= T
= +25°C
= T
= +25°C
= T
= 25°C
= T
= −1.0, T
= 2.0 k, C
= 2.0 k, C
= −1.0, R
= ±10 V, R
= 100 W, f = 1.0 to 100 kHz
= +24 V, V
= +24 V, V
= +24 V, V
= +24 V, V
low
low
low
low
low
low
to T
to T
to T
to T
to T
to T
in
A
high
L
EE
= −10 V to +10 V, R
L
L
high
high
high
high
high
= T
L
= 50 W, V
= 100 pF
= 100 pF
J
EE
EE
EE
EE
= 2.0 k
is disconnected before V
= T
low
= 0 V, T
= 0 V, T
= 0 V, T
= 0 V, T
CM
low
CM
CM
to T
L
L
= 0)
TCA0372
TCA0372B
TCA0372
TCA0372B
= 100 mA)
= 1.0 A)
to T
O
= 0)
= 0)
high
= 0.5 VRMS, f = 1.0 kHz
A
A
A
A
high
Characteristics
Characteristics
= +25°C
= T
= +25°C
= T
S
low
low
S
= 100 W)
L
= 10 k)
= 2.0 k, C
to T
to T
L
high
high
= 100 pF, R
CC
(V
(V
, a diode between V
L
CC
CC
= 100 pF)
= +15 V, V
= +15 V, V
TCA0372, TCA0372B
L
= 2.0 k)
http://onsemi.com
EE
EE
= −15 V, R
= −15 V, R
EE
3
and Ground is recommended to avoid damaging the device.
L
L
connected to ground, T
connected to ground, T
DV
Symbol
Symbol
CMRR
PSRR
GBW
A
V
THD
V
V
V
V
V
SR
f
A
I
IO
I
VOL
e
I
ICR
IO
OH
OH
IB
OL
OL
D
IO
m
m
n
/DT
14.0
13.9
22.5
22.5
Min
Min
1.0
0.9
0.7
30
70
70
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
V
A
A
EE
EE
= +25°C, unless otherwise noted.)
= −40° to +125°C.)
to (V
to (V
−14.2
14.2
22.7
0.02
Typ
Typ
100
100
1.0
1.3
5.0
8.0
1.4
1.4
20
10
90
90
65
15
22
−
−
−
−
−
−
−
−
CC
CC
−1.0)
−1.3)
−14.0
−13.9
Max
Max
500
1.5
1.5
15
20
50
10
10
14
14
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Degrees
nV/ Hz
mV/°C
V/mV
V/ms
MHz
Unit
Unit
mV
mA
nA
nA
dB
dB
dB
%
V
V
V
√