TC1017-2.8VLTTR Microchip Technology, TC1017-2.8VLTTR Datasheet - Page 12
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TC1017-2.8VLTTR
Manufacturer Part Number
TC1017-2.8VLTTR
Description
IC REG LDO 2.8V 150MA SD SC70-5
Manufacturer
Microchip Technology
Datasheet
1.TC101617EV.pdf
(22 pages)
Specifications of TC1017-2.8VLTTR
Regulator Topology
Positive Fixed
Voltage - Output
2.8V
Voltage - Input
Up to 6V
Voltage - Dropout (typical)
0.285V @ 150mA
Number Of Regulators
1
Current - Output
150mA (Min)
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Number Of Outputs
1
Polarity
Positive
Input Voltage Max
6 V
Output Voltage
2.8 V
Output Type
Fixed
Dropout Voltage (max)
500 mV
Output Current
150 mA
Line Regulation
0.04 % / V
Load Regulation
0.38 %
Voltage Regulation Accuracy
0.5 %
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Limit (min)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC1017-2.8VLTTR
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
TC1017-2.8VLTTR
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
TC1017
5.0
5.1
Integrated thermal protection circuitry shuts the
regulator off when the die temperature exceeds
approximately 160°C. The regulator remains off until
the die temperature drops to approximately 150°C.
5.2
The TC1017 is available in the SC-70 package. The
thermal resistance for the SC-70 package is
approximately 450°C/W when the copper area used in
the PCB layout is similar to the JEDEC J51-7 high ther-
mal conductivity standard or semi-G42-88 standard.
For applications with a larger or thicker copper area,
the thermal resistance can be lowered. See AN792, “A
Method to Determine How Much Power a SOT-23 Can
Dissipate in an Application”, DS00792, for a method to
determine the thermal resistance for a particular appli-
cation.
The TC1017 power dissipation capability is dependant
upon several variables: input voltage, output voltage,
load current, ambient temperature and maximum
junction temperature. The absolute maximum steady-
state junction temperature is rated at +125°C. The
power dissipation within the device is equal to:
EQUATION 5-1:
The V
compared to the (V
the power dissipation within the LDO to be:
EQUATION 5-2:
To
capability, the following equation is used:
EQUATION 5-3:
DS21813D-page 12
Where:
determine
P
IN
T
T
R
D
J_MAX
A_MAX
THERMAL CONSIDERATIONS
Thermal Shutdown
Power Dissipation: SC-70
JA
x I
=
GND
P
P
V
DMAX
D
IN
= the maximum junction
= the maximum ambient
= the thermal resistance from
the
=
–
term is typically very small when
temperature allowed
temperature
junction to air
IN
V
V
=
OUT
–V
IN
maximum
--------------------------------------------- -
OUT
T
–
J_MAX
V
OUT
) x I
I
LOAD
R
–
LOAD
JA
T
A_MAX
+
I
power
LOAD
V
term, simplifying
IN
I
GND
dissipation
Given the following example:
Find:
1.
2.
3.
In this example, the TC1017 dissipates approximately
158.5 mW and the junction temperature is raised 71°C
over the ambient. The absolute maximum power
dissipation is 155 mW when given a maximum ambient
temperature of 55°C.
Input voltage, output voltage or load current limits can
also be determined by substituting known values in the
power dissipation equations.
Figure 5-1 and Figure 5-2 depict typical maximum
power dissipation versus ambient temperature, as well
as typical maximum current versus ambient tempera-
ture, with a 1V input voltage to output voltage
differential, respectively.
FIGURE 5-1:
Ambient Temperature (SC-70 package).
Internal power dissipation:
Maximum allowable ambient temperature:
Maximum
desired ambient:
P
T
400
350
300
250
200
150
100
DMAX
50
A_MAX
0
-40
I
V
LOAD
OUT
V
T
IN
A
=
=
=
=
=
=
=
-15
allowable
158.5mW
P
=
=
=
=
T
54 C
V
4.1V 2.85
125 C 158.5mW 450 C/W
125 C 71 C
D
J_MAX
IN_MAX
Ambient Temperature (°C)
3.0V to 4.1V
2.85V ±2.5%
120 mA (output current)
55°C (max. desired ambient)
=
=
=
10
Power Dissipation vs.
–
T
----------------------------- -
125 C 55 C
---------------------------------- -
155mW
© 2005 Microchip Technology Inc.
J_MAX
–
–
–
450 C/W
–
R
P
35
power
V
DMAX
JA
OUT_MIN
–
–
0.975
T
60
A
R
dissipation
85
JA
120mA
I
LOAD
110
at