PKC-136 STMicroelectronics, PKC-136 Datasheet - Page 4

DIODE TVS 160V/700V DO-15

PKC-136

Manufacturer Part Number
PKC-136
Description
DIODE TVS 160V/700V DO-15
Manufacturer
STMicroelectronics
Series
PKC-136r
Datasheet

Specifications of PKC-136

Voltage - Clamping
160V
Technology
Mixed Technology
Power (watts)
1.5W
Number Of Circuits
1
Applications
Overload Protection
Package / Case
DO-204AC, DO-15, Axial
Mounting Style
Through Hole
Breakdown Voltage Range
150V To 170V
Peak Pulse Current Ippm
2.7A
Diode Case Style
DO-15
No. Of Pins
2
Power Dissipation Pd
1.5W
Termination Type
Axial Leaded
Capacitance, Cd
35pF
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Working
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-3138-3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PKC-136
Manufacturer:
STM
Quantity:
37 000
Part Number:
PKC-136N
Manufacturer:
ST
0
Part Number:
PKC-136RL
Manufacturer:
STM
Quantity:
6 000
PKC-136
4/5
Fig. 5: Thermal resistance junction to ambient
versus copper surface under each lead.
110
100
Fig. 6-2: Reverse leakage current versus reverse
voltage applied (typical values, for diode).
1.E+02
1.E+01
1.E+00
Fig. 8: Clamping voltage versus peak pulse
current (maximum values).
10.0
1.E-01
1.E-02
1.E-03
90
80
70
60
50
40
30
20
10
1.0
0.1
0
160
0
Rth(j-a)
Ipp(A)
0
IR(µA)
tp<500ns
165
1
50 100 150 200 250 300 350 400 450 500 550 600 650 700
170
2
175
3
180
Tj=25°C
Vcl(V)
4
185
S(cm²)
Tj=100°C
Tj=125°C
Tj=150°C
Tj=25°C
VR(V)
190
5
195
6
200
Tj=125°C
7
205
8
210
Lleads=10mm
215
9
220
10
Fig. 6-1: Reverse leakage current versus reverse
voltage applied (typical values, for Transil).
1.E+00
Fig. 7: Transient peak forward voltage versus
d
50
45
40
35
30
25
20
15
10
Fig. 9: Junction capacitance versus reverse
voltage applied on clamping characteristic (typical
values).
100
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
5
0
10
IF
0
V (V)
/dt (90% confidence).
1
C(pF)
FP
10
Tj=125°C
IR(µA)
IF=3A
50
20
30
100
40
150
50
10
200
60
dIF/dt(A/µs)
70
VR(V)
250
VR(V)
Tj=125°C
Tj=100°C
Tj=150°C
Tj=25°C
80
300
90 100 110 120 130 140 150
100
350
400
Vosc=30mV
F=1MHz
Tj=25°C
450
RMS
1000
500

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