SSRP105B1 STMicroelectronics, SSRP105B1 Datasheet - Page 4

• Manufacturer Part Number: SSRP105B1
• Description: IC OVP TELECOM LINE DUAL 8SOIC
• Manufacturer: STMicroelectronics

Specifications of SSRP105B1

• Technology: Mixed Technology
• Number Of Circuits: 2
• Applications: Telecommunications
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Voltage - Working: -
• Voltage - Clamping: -
• Other names: 497-4303-5

SSRP105B1
ELECTRICAL CHARACTERISTICS between TIP and RING (T
Note 1:
Note 2:
Note 3:
Fig. 4: Relative variation of holding current versus
junction temperature.
1.2
0.8
0.6
0.4
0.2
4/6
ELECTRICAL CHARACTERISTICS between TIP and GND, RING and GND (T
1
0
Symbol
Symbol
V
0
IH(Tamb)/IH(Tamb=25°C)
I
I
I
C
BO
R
H
R
Positive voltage means between T and G, or between R and G.
Negative voltage means between G and T, or between G and R.
See test circuit for V
I
R
measured at V
Leakage current (note 3)
Breakover voltage
(note 2)
Holding current
Leakage current
(note 3)
Capacitance
20
Parameter
R
Parameter
Tamb(°C)
guarantees V
BO
parameters
40
Fig. 6: Capacitance versus applied reverse
voltages (typical values).
100
10
1
1
C(pF)
BR
Positive voltage
Negative voltage
Positive polarity
Negative polarity
V
V
F = 1MHz, V
F = 1MHz, V
R
R
> V
60
= +105 V
= - 180 V
R
Test conditions (note 1)
V
V
10
RMS
RMS
R
R
80
= +180 V
= - 180 V
= 1V, V
= 1V, V
VR(V)
Test conditions
Fig. 5: Non-repetitive peak on-state current versus
overload duration (Tj initial = +25°C)..
25
20
15
10
. 50Hz
. 10/700µs
. 50Hz
. 10/700µs
5
0
0.01
ITSM(A)
R(T/G)
R(T/G)
TIPor RING(+) / GND(-)
100
GND(+) / TIP or RING(-)
= -5V
= -50V
amb
0.1
=25°C)
Tj= 25°C
F= 1MHz
Vrms= 1V
1000
1
Min.
100
150
tp(s)
Min
amb
Typ.
10
30
16
=25°C)
Max
10
10
Max.
165
165
225
225
10
10
100
F= 50Hz
Unit
µA
Unit
mA
µA
pF
V
1000