THDT6511DRL STMicroelectronics, THDT6511DRL Datasheet - Page 3

• Manufacturer Part Number: THDT6511DRL
• Description: TVS SLIC PROTECTION ASD 8-SOIC
• Manufacturer: STMicroelectronics

Specifications of THDT6511DRL

• Voltage - Clamping: 65V
• Technology: Mixed Technology
• Number Of Circuits: 2
• Applications: SLIC
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Voltage - Working: -

THBT15011, THBT20011, THBT27011
Table 3.
Table 4.
1. I
2. Measured at 50 Hz (1 cycle) - See
3. See
4. V
Table 5.
1. See
THBT15011D
THBT20011D
THBT27011D
THBT15011D
THBT20011D
THBT27011D
Symbol
V
V
V
I
I
V
I
V
R
RM
Order code
I
BO
PP
C
RM
BR
BO
R
H
Type
R
F
measured at V
= 1 V, F = 1 MHz.
Figure 5: Test circuit 2 for dynamic IH
Figure 6: Test circuit 3 for V
Stand-off voltage
Leakage current at stand-off voltage
Continuos reverse voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Forward voltage drop
Peak pulse current
Capacitance
Electrical characteristics (T
Static parameters
Dynamic breakover voltages (transversal mode)
R
Symbol
guarantee V
V
V
V
max.
BO
BO
BO
µA
I
5
5
5
RM
Parameter
@ V
BR
BO
RM
135
180
240
min ≥ V
V
Figure 4: Test circuit 1 for IBO and VBO
10/700 µs
10/700 µs
10/700 µs
1.2/50 µs
1.2/50 µs
1.2/50 µs
parameters. R
2/10 µs
2/10 µs
2/10μs
R
parameter.
max.
µA
50
50
50
I
R
(1)
amb
p
Doc ID 3767 Rev 9
@ V
is the protection resistor located on the line card.
= 25 °C)
1.5 kV
1.5 kV
2.5 kV
1.5 kV
1.5 kV
2.5 kV
1.5 kV
1.5 kV
2.5 kV
150
200
270
R
V
Test conditions
max.
210
290
380
V
R
R
R
R
R
R
R
R
R
V
p
p
p
p
p
p
p
p
p
BO
= 10 Ω
= 10 Ω
= 62 Ω
= 10 Ω
= 10 Ω
= 62 Ω
= 10 Ω
= 10 Ω
= 62 Ω
parameters.
(1)
(2)
min.
50
50
50
V
@ I
BO
I
max.
I
BO
400
400
400
PP
mA
I
I
I
I
I
I
I
I
I
I
I
R
H
PP
PP
PP
PP
PP
PP
PP
PP
PP
I
= 30 A
= 30 A
= 38 A
= 30 A
= 30 A
= 38 A
= 30 A
= 30 A
= 38 A
min.
I
mA
150
150
150
H
(3)
Characteristics
V
RM
Max
190
190
200
270
270
280
360
360
400
V
BR
max.
V
C
pF
80
80
80
BO
V
(4)
Unit
V
V
V
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