CLP200M STMicroelectronics, CLP200M Datasheet - Page 11

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CLP200M

Manufacturer Part Number
CLP200M
Description
IC OVP/OCP TELECOM POWERSO-10
Manufacturer
STMicroelectronics
Datasheet

Specifications of CLP200M

Voltage - Working
200V
Technology
Mixed Technology
Number Of Circuits
2
Applications
Telecommunications
Package / Case
PowerSO-10 Exposed Bottom Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Voltage - Clamping
-

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Fig. 23 : CLP200 M response to a negative surge.
Figures 22 and 23 give the voltage and current be-
havior during positive and negative 4kV, 10/700 s,
surge tests using a LCP1511D as second stage
protection device. The firing threshold values are
now adjusted to GND and to -Vbat (-48V) by the
action of the second stage protection which acts as
an external voltage reference.
As shown on these figures, the maximum remain-
ing voltage does not exceed +2.5V for positive
surges and -60V for negative surges.
Consequently, the CLP200M totally fulfills this test.
Fig. 22 : CLP200M response to a positive surge.
3.3.2 Power induction test
(Test 3a and 3b, table 2/K20)
Fig. 24 : Power induction test.
Figures 25 and 26 show that the maximum remain-
ing voltage does not exceed +2V for positive
surges and -55V for negative surges.
Consequently, the CLP200M totally fulfills this test.
The test duration is not specified in test 3b. If the
duration exceeds 5s we do suggest to follow the
soldering and mounting recommendations given
on page 17 of this document.
Fig. 25 : Induction test behavior (Test 3a).
TEST
3a
V(RMS)
50 Hz
I
1
V
300
(RMS)
TIPL
1/2 CLP200M
Rsense
GND
4
TIPS
R( )
600
V1
Rp
50
-48V
Duration
LCP1511D
CLP200M
I2
0.2s
11/21
SLIC
V2

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