TB1100M-13 Diodes Zetex, TB1100M-13 Datasheet - Page 3
![THYRISTOR PROTECT BI-DIR 50A SMB](/photos/1/39/13950/31-smb_sml.jpg)
TB1100M-13
Manufacturer Part Number
TB1100M-13
Description
THYRISTOR PROTECT BI-DIR 50A SMB
Manufacturer
Diodes Zetex
Datasheet
1.TB2600M-13-F.pdf
(5 pages)
Specifications of TB1100M-13
Voltage - Breakover
130V
Voltage - Off State
90V
Voltage - On State
3.5V
Current - Peak Pulse (8 X 20µs)
250A
Current - Peak Pulse (10 X 1000µs)
50A
Current - Hold (ih)
150mA
Number Of Elements
1
Capacitance
90pF
Package / Case
DO-214AA, SMB
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TB1100M-13-F
Manufacturer:
DIODES
Quantity:
45 000
Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature
TB0640M - TB3500M
Document number: DS30361 Rev. 9 - 2
Fig. 5 Relative Variation of Holding Current vs. Junction Temperature
1.4
1.3
1.2
0.8
0.7
0.6
0.5
0.4
0.9
0.3
1.05
0.95
1.1
1.1
1
1
0.001
-50
-50
0.01
100
0.1
10
1
-25
-25
Fig. 1 Off-State Current vs. Junction Temperature
-25
T , JUNCTION TEMPERATURE (ºC)
T , JUNCTION TEMPERATURE (°C)
J
J
0
0
T , JUNCTION TEMPERATURE (°C)
J
0
25
25
V
25
DRM
50
= 50V
50
75
50
75
100
75
125
100
100
150
125
125
175
150
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Fig. 6 Relative Variation of Junction Capacitance vs. Reverse Voltage Bias
Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature
1.05
0.95
1.15
0.1
0.9
1.2
1.1
1
1
-50 -25
1
100
10
1
1
T , JUNCTION TEMPERATURE (°C)
J
Fig. 4 On-State Current vs. On-State Voltage
1.5
0
V , REVERSE VOLTAGE (V)
R
25
V , ON-STATE VOLTAGE (V)
2
T
50
2.5
10
TB0640M - TB3500M
75
3
100 125 150 175
3.5
4
© Diodes Incorporated
September 2010
4.5
100
5