TISP4C145H3BJR-S Bourns Inc., TISP4C145H3BJR-S Datasheet
TISP4C145H3BJR-S
Specifications of TISP4C145H3BJR-S
Related parts for TISP4C145H3BJR-S
TISP4C145H3BJR-S Summary of contents
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Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge - Low Off-State Capacitance V DRM Device Name V TISP4C115H3BJ † 90 TISP4C125H3BJ † 100 TISP4C145H3BJ † 120 TISP4C165H3BJ 135 TISP4C180H3BJ † 145 TISP4C220H3BJ † 180 ...
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TISP4CxxxH3BJ Overvoltage Protector Series Absolute Maximum Ratings °C (Unless Otherwise Noted) A Repetitive peak off-state voltage Non-repetitive peak impulse current (see Notes 1 and 2) 2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape) 10/160 μs (TIA-968-A, 10/160 ...
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TISP4CxxxH3BJ Overvoltage Protector Series Thermal Characteristics °C (Unless Otherwise Noted) A Parameter R Junction to ambient thermal resistance θJA NOTE: 4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track ...
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TISP4CxxxH3BJ Overvoltage Protector Series TISP4xxxF3LM Overvoltage Protector Series Typical Characteristics 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE = 25 ° Vrms ...