MMT08B064T3G ON Semiconductor, MMT08B064T3G Datasheet - Page 3

• Manufacturer Part Number: MMT08B064T3G
• Description: TSPD BIDIRECT 64V 80A SMB
• Manufacturer: ON Semiconductor

Specifications of MMT08B064T3G

• Voltage - Breakover: 77V
• Voltage - Off State: 58V
• Voltage - On State: 3V
• Current - Peak Pulse (8 X 20µs): 250A
• Current - Peak Pulse (10 X 1000µs): 80A
• Current - Hold (ih): 150mA
• Number Of Elements: 1
• Capacitance: 130pF
• Package / Case: DO-214AA, SMB
• Breakover Current Ibo Max: 32 A
• Rated Repetitive Off-state Voltage Vdrm: 58 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.01
100
0.1
86
84
82
80
78
76
74
50
10
−60
−60
1
0
0
Figure 5. Exponential Decay Pulse Waveform
Figure 3. Maximum Breakover Voltage versus
t
r
−40
V
−40
Figure 1. Typical Off−State Current versus
D1
Peak
Value
= 50 V
−20
−20
t
0
f
0
TEMPERATURE (°C)
TEMPERATURE (°C)
t
t
Temperature
r
f
= rise time to peak value
= decay time to half value
20
Temperature
20
Half Value
TIME (ms)
40
40
60
60
80
80
100
100
120
http://onsemi.com
120
MMT08B064T3
140
140
3
250
230
210
190
170
150
130
110
90
70
50
700
600
500
400
300
200
100
80
78
76
74
72
70
68
66
10
−60
−40
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
−40
Figure 2. Typical Breakdown Voltage versus
−20
Figure 4. Typical Holding Current versus
−20
0
100
0
TEMPERATURE (°C)
TEMPERATURE (°C)
20
Temperature
20
Temperature
TIME (s)
40
40
60
60
1000
80
80
100
100
120
120
100000
140