MMT08B350T3G ON Semiconductor, MMT08B350T3G Datasheet

TSPD BIDIRECT 350V 80A SMB

MMT08B350T3G

Manufacturer Part Number
MMT08B350T3G
Description
TSPD BIDIRECT 350V 80A SMB
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMT08B350T3G

Voltage - Breakover
400V
Voltage - Off State
300V
Voltage - On State
3V
Current - Peak Pulse (8 X 20µs)
250A
Current - Peak Pulse (10 X 1000µs)
80A
Current - Hold (ih)
150mA
Number Of Elements
1
Capacitance
45pF
Package / Case
DO-214AA, SMB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMT08B350T3G
Manufacturer:
ON
Quantity:
30 000
MMT08B350T3
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
at customer premises.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 1
Off−State Voltage − Maximum
Maximum Pulse Surge Short Circuit Current
Non−Repetitive Peak On−State Current 60 Hz
Full Sign Wave
Maximum Non−Repetitive Rate of Change of
On−State Current Exponential Waveform,
< 100 A
These Thyristor Surge Protective devices (TSPD) prevent
Secondary protection applications for electronic telecom equipment
Controlled Temperature Environments
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
Devices
Unprotected Operation
High Surge Current Capability: 80 Amps 10 x 1000 msec, for
The MMT08B350T3 is used to help equipment meet various
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non−Semiconductor
Fail−Safe, Shorts When Overstressed, Preventing Continued
Surface Mount Technology (SMT)
Pb−Free Package is Available
Non−Repetitive
Double Exponential Decay Waveform
(−25°C Initial Temperature) (Notes 1 and 2)
Indicates UL Recognized − File #E210057
Rating
(T
J
= 25°C unless otherwise noted)
Preferred Devices
10 x 1000 mse
10 x 160 msec
10 x 360 msec
10 x 560 msec
10 x 700 msec
2 x 10 msec
8 x 20 msec
Symbol
I
I
I
I
I
I
I
V
I
di/dt
PPS1
PPS2
PPS3
PPS4
PPS5
PPS6
PPS7
TSM
DM
Value
"300
±250
±250
±150
±150
±100
±100
300
±80
32
1
A(pk)
A(pk)
A/ms
Unit
V
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MMT08B350T3
MMT08B350T3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
80 AMP SURGE, 350 VOLTS
Device
(Note: Microdot may be in either location)
MT1
BIDIRECTIONAL TSPD
(Essentially JEDEC DO−214AA)
ORDERING INFORMATION
A
Y
WW
RPCM = Device Code
G
MARKING DIAGRAM
http://onsemi.com
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(No Polarity)
(Pb−Free)
CASE 403C
Package
RPCM G
SMB
SMB
AYWW
SMB
Publication Order Number:
G
2500/Tape and Reel
2500/Tape and Reel
MMT08B350T3/D
Shipping
MT2
(
)

Related parts for MMT08B350T3G

MMT08B350T3G Summary of contents

Page 1

... TSM Device "300 MMT08B350T3 di/dt A/ms MMT08B350T3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. ...

Page 2

THERMAL CHARACTERISTICS Characteristic Operating Temperature Range Blocking or Conducting State Overload Junction Temperature − Maximum Conducting State Only Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS forward and reverse polarities. Characteristics Breakover Voltage (Both ...

Page 3

V = 50V D1 10 1.0 0.1 0.01 0.001 −60 −40 − TEMPERATURE (°C) Figure 1. Typical Off−State Current versus Temperature 440 430 420 410 400 390 380 −60 −40 − ...

Page 4

MMT08B350T3 TIP GND OUTSIDE PLANT RING PPTC* TIP GND OUTSIDE PLANT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TIP OUTSIDE GND PLANT RING HEAT COIL http://onsemi.com TELECOM EQUIPMENT TELECOM EQUIPMENT TELECOM EQUIPMENT 4 ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords