ALD1101PAL Advanced Linear Devices Inc, ALD1101PAL Datasheet - Page 4

• Manufacturer Part Number: ALD1101PAL
• Description: MOSFET 2N-CH 13.2V 40MA 8PDIP
• Manufacturer: Advanced Linear Devices Inc

Specifications of ALD1101PAL

• Package / Case: 8-DIP (0.300", 7.62mm)
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 13.2V
• Vgs(th) (max) @ Id: 1V @ 10µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Minimum Operating Temperature: 0 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 75 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 0.01 S
• Drain-source Breakdown Voltage: 13.2 V
• Gate-source Breakdown Voltage: 13.2 V
• Continuous Drain Current: 40 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1002

ALD1101A/ALD1101B
Advanced Linear Devices
4
ALD1101