ALD1101PAL Advanced Linear Devices Inc, ALD1101PAL Datasheet - Page 4
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ALD1101PAL
Manufacturer Part Number
ALD1101PAL
Description
MOSFET 2N-CH 13.2V 40MA 8PDIP
Manufacturer
Advanced Linear Devices Inc
Datasheet
1.ALD1101PAL.pdf
(4 pages)
Specifications of ALD1101PAL
Package / Case
8-DIP (0.300", 7.62mm)
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Drain To Source Voltage (vdss)
13.2V
Vgs(th) (max) @ Id
1V @ 10µA
Power - Max
500mW
Mounting Type
Through Hole
Minimum Operating Temperature
0 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
75 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)
0.01 S
Drain-source Breakdown Voltage
13.2 V
Gate-source Breakdown Voltage
13.2 V
Continuous Drain Current
40 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Current - Continuous Drain (id) @ 25° C
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1014-1002
ALD1101A/ALD1101B
Advanced Linear Devices
4
ALD1101