ALD110904SAL Advanced Linear Devices Inc, ALD110904SAL Datasheet - Page 2

• Manufacturer Part Number: ALD110904SAL
• Description: MOSFET N-CH 10.6V DUAL 8SOIC
• Manufacturer: Advanced Linear Devices Inc
• Series: EPAD®r

Specifications of ALD110904SAL

• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 10.6V
• Vgs(th) (max) @ Id: 420mV @ 1µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: 0 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 500 Ohm (Typ) @ 4.4 V
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Drain-source Breakdown Voltage: 10.6 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1037

ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
Gate-Source voltage,
Power dissipation
Operating temperature range SCL, PCL, SAL, PAL package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
V + = +5V V- = GND T A = 25
CAUTION:
Notes:
ALD110804/ALD110904
Parameter
Gate Threshold Voltage
Offset Voltage
V GS(th)1 -V GS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
Gate Leakage Current
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Input Capacitance
1
Consists of junction leakage currents
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
V
1
V
GS
DS
1
Symbol
°
V GS(th)
V OS
TC ∆ VOS
TC∆ VGS(th)
I DS (ON)
G FS
∆G FS
G OS
R DS (ON)
∆R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
C unless otherwise specified
Min
10
0.38
Advanced Linear Devices
ALD110804 / ALD110904
Typ
0.40
+1.6
12.0
-1.7
500
0.0
3.0
1.4
1.8
0.5
2.5
0.1
68
10
10
10
60
2
5
3
Max
0.42
400
200
10
4
1
Unit
V
mV
µV/ °C
mV/ °C
mA
mmho
%
µmho
Ω
%
pA
nA
pA
nA
pF
pF
ns
ns
dB
-65°C to +150°C
0°C to +70°C
500 mW
+260°C
I DS =1µA, V DS = 0.1V
V DS1 = V DS2
I D = 1µA, V DS = 0.1V
I D = 20µA, V DS = 0.1V
I D = 40µA, V DS = 0.1V
V GS = + 9.9V, V DS = +5V
V GS = + 4.2V, V DS = +5V
V GS = + 4.4V
V DS = + 9.4V
V GS =+4.4V
V DS = +9.4V
V DS = 0.1V
V GS = +4.4V
V I DS = 1.0µA
V GS = -0.6V
V GS = -0.6V
V DS =5V, T A = 125°C
V DS = 0V, V GS = 5V
T A =125°C
V + = 5V R L = 5KΩ
V + = 5V R L = 5KΩ
f = 100KHz
Test Conditions
10.6V
10.6V
2 of 11