ALD110814SCL Advanced Linear Devices Inc, ALD110814SCL Datasheet - Page 2

• Manufacturer Part Number: ALD110814SCL
• Description: MOSFET N-CH 10.6V QUAD 16SOIC
• Manufacturer: Advanced Linear Devices Inc
• Series: EPAD®r

Specifications of ALD110814SCL

• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 10.6V
• Vgs(th) (max) @ Id: 1.42V @ 1µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: 0 C
• Configuration: Quad
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 500 Ohm (Typ) @ 4 V
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Drain-source Breakdown Voltage: 10.6 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1029

ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
Gate-Source voltage,
Power dissipation
Operating temperature range SCL, PCL, SAL, PAL package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
V + = +5V V- = GND T A = 25
CAUTION:
Notes:
ALD110814/ALD110914
Parameter
Gate Threshold Voltage
Offset Voltage
V GS(th)1 -V GS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Mismatch
Drain Source Breakdown Voltage
Drain Source Leakage Current
Gate Leakage Current
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
1
Consists of junction leakage currents
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
1
V
V
GS
DS
1
°
V GS(th)
V OS
TC ∆ VOS
TC∆ VGS(th)
I DS (ON)
G FS
∆G FS
G OS
R DS (ON)
∆R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
C unless otherwise specified
Symbol
1.38
Min
10
Advanced Linear Devices
ALD110814 / ALD110914
Typ
+1.6
1.40
12.0
-1.7
500
0.0
3.0
1.4
1.8
0.5
2.5
0.1
68
10
10
10
60
3
5
3
1.42
Max
400
200
10
4
1
Unit
V
mV
µV/ °C
mV °C
mA
%
µmho
Ω
%
V
pA
nA
pA
nA
ns
ns
dB
mmho
pF
pF
-65°C to +150°C
0°C to +70°C
500 mW
+260°C
10.6V
10.6V
Test Conditions
I DS =1µA, V DS = 0.1V
I DS =1µA
V DS1 = V DS2
I D = 1µA, V DS = 0.1V
I D = 20µA, V DS = 0.1V
I D = 40µA, V DS = 0.1V
V GS = +10.6V, V DS = + 5V
V GS = + 5.4V, V DS = + 5V
V GS = +5.4V
V DS = +10.4V
V GS = + 5.4V
V DS = +10.4V
V DS = 0.1V
V GS = +5.6V
I DS = 1.0µA
V GS = +0.4V
V GS = +0.4V
V DS =5V, T A = 125°C
V DS = 0V, V GS = 5V
T A =125°C
V + = 5V R L = 5KΩ
V + = 5V R L = 5KΩ
f = 100KHz
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