SI1035X-T1-GE3 Vishay, SI1035X-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI1035X-T1-GE3
• Description: MOSFET N/P-CH 20V SC-89
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1035X-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 180mA, 145mA
• Vgs(th) (max) @ Id: 400mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 180mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 5ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 400mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1035X-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS (T
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
40
30
20
10
0.5
0.4
0.3
0.2
0.1
0.0
5
4
3
2
1
0
0
0.0
0
0
V
I
D
DS
= 150 mA
On-Resistance vs. Drain Current
= 10 V
1
50
V
0.2
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
2
- Drain Current (mA)
Gate Charge
100
V
GS
0.4
3
= 1.8 V
V
150
GS
= 5 V thru 1.8 V
4
0.6
V
200
V
GS
GS
5
= 4.5 V
= 2.5 V
1 V
250
0.8
6
A
= 25 °C, unless otherwise noted)
100
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
- 50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
V
f = 1 MHz
GS
0.5
4
V
V
DS
Transfer Characteristics
= 0 V
GS
T
C
J
0
oss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
1.0
Capacitance
8
25
C
T
V
I
D
J
iss
GS
= - 55 °C
= 200 mA
Vishay Siliconix
= 4.5 V
50
1.5
12
125 °C
75
Si1035X
www.vishay.com
V
I
D
25 °C
2.0
16
GS
= 175 mA
100
= 1.8 V
125
2.5
20
3