SI4500BDY-T1-GE3 Vishay, SI4500BDY-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI4500BDY-T1-GE3
• Description: MOSFET N/P-CH 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4500BDY-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.6A, 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 7A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 22mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4500BDY-T1-GE3TR

Si4500DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com FaxBack 408-970-5600
2-2
Static
Gate Threshold Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate-Body Leakage
Z
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Forward Transconductance
Diode Forward Voltage
Diode Forward Voltage
Dynamic
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Delay Time
Rise Time
Rise Time
Turn-Off Delay Time
Turn-Off Delay Time
Fall Time
Fall Time
Source-Drain Reverse Recovery Time
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
G
V l
a
Parameter
O S
D i C
b
b
b
b
R
i
b
b
300 s, duty cycle
b
b
b
Symbol
V
V
r
r
I
I
DS(on)
DS(on)
t
t
t
t
I
I
I
I
I
GS(th)
GS(th)
D(on)
D(on)
V
V
Q
Q
Q
Q
d(on)
d(on)
d(off)
d(off)
GSS
GSS
DSS
DSS
g
g
Q
Q
2%.
t
t
SD
SD
t
t
t
t
fs
fs
gs
gs
gd
gd
rr
rr
r
r
f
f
g
g
V
V
V
DS
I
I
V
D
D
V
DS
I
New Product
D
DS
DS
= –10 V, V
= 10 V, V
I
I
= –16 V, V
V
–
V
V
F
F
V
V
V
= 16 V, V
V
10 V V
V
V
V
V
V
DS
V
V
V
V
1
1
1
V
GS
GS
V
I
DS
= 1.7 A, di/dt = 100 A/ s
= 1.7 A, di/dt = 100 A/ s
DS
DS
DS
I
S
DD
DS
DS
DS
GS
GS
S
DD
DD
DS
DS
A, V
A, V
A, V
= –1.7 A, V
= –5 V, V
= 1.7 A, V
= V
= –4.5 V, I
= –2.5 V, I
= 0 V, V
= 0 V, V
= –15 V, I
= V
= –16 V, V
= –10 V, R
= 5 V, V
= 16 V, V
= 4.5 V, I
= 2.5 V, I
= 10 V, R
= 15 V, I
Test Condition
N Ch
N-Channel
N Channel
P-Channel
N Ch
N Channel
N-Channel
GEN
P-Channel
GEN
GEN
10 V, R
GS
GS
10 V R
GS
GS
GS
GS
, I
, I
= 4.5 V, R
= –4.5 V, R
= 4.5 V, R
= –4.5 V, I
= 4.5 V, I
D
GS
GS
= 0 V, T
D
= 0 V, T
GS
GS
D
D
GS
= –250 A
D
D
D
D
GS
GS
4 5 V I
= 250 A
L
L
GS
=
=
L
= 7.0 A
= –4.5 A
= –3.5 A
= 4.5 V
= –4.5 V
= 7.0 A
= –4.5 A
= 6.0 A
= 10
l
l
= 10
= 0 V
= 0 V
= 0 V
10
= 0 V
10
12 V
12 V
J
J
D
G
D
= 55 C
= 55 C
G
G
= 3.5 A
= 6
= –4.5 A
= 6
= 6
4 5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
–0.6
–20
0.6
30
Typ
0.022
0.058
0.030
0.087
–0.80
S-00269—Rev. A, 26-Apr-99
0.70
8.5
3.0
2.8
3.3
1.7
22
10
13
22
15
40
32
50
57
20
40
40
40
Document Number: 70880
a
Max
0.030
0.065
0.040
0.100
–1.2
100
100
1.2
–1
–5
25
15
40
30
80
60
40
80
80
80
100
100
1
5
Unit
nC
nC
nA
nA
ns
ns
V
V
A
A
S
S
V
V
C
C
A
A
A