SI4948BEY-T1-GE3 Vishay, SI4948BEY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4948BEY-T1-GE3
• Description: MOSFET P-CH D-S 60V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4948BEY-T1-GE3

• Module Configuration: Dual
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Power Dissipation: RoHS Compliant
• Continuous Drain Current Id: -2.4A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4948BEY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
V
DS
Source-Drain Diode Forward Voltage
= 3.1 A
GS
0.2
On-Resistance vs. Drain Current
= 30 V
= 4.5 V
5
3
V
SD
Q
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
I
D
- Drain Current (A)
Gate Charge
10
6
T
0.6
J
= 150 °C
15
9
0.8
T
J
V
= 25 °C
GS
20
12
1.0
= 10 V
25
15
1.2
1000
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
800
600
400
200
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50 - 25
0
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
C
rss
V
I
D
GS
= 3.1 A
10
= 10 V
2
V
0
V
T
C
DS
GS
J
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
20
25
Capacitance
4
50
I
D
30
Vishay Siliconix
= 3.1 A
75
C
Si4948BEY
iss
6
100
40
www.vishay.com
125
8
50
150
175
60
10
3