SI7923DN-T1-GE3 Vishay, SI7923DN-T1-GE3 Datasheet - Page 4
![MOSFET P-CH D-S 30V 1212-8 PPAK](/photos/22/17/221719/4472234_sml.jpg)
SI7923DN-T1-GE3
Manufacturer Part Number
SI7923DN-T1-GE3
Description
MOSFET P-CH D-S 30V 1212-8 PPAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI7923DN-T1-E3.pdf
(6 pages)
Specifications of SI7923DN-T1-GE3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
47 mOhm @ 6.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Transistor Polarity
P Channel
Continuous Drain Current Id
6.4A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
75mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7923DN-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7923DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
71 440
Part Number:
SI7923DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7923DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.0
- 0.1
- 0.2
- 0.3
- 0.4
0.6
0.5
0.4
0.3
0.2
0.1
0.01
- 50
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
I
T
D
J
= 250 µA
25
- Temperature (°C)
10
-3
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
1
100
0.1
10
Limited by R
-2
* V
Safe Operating Area, Junction-to-Ambient
Limited
I
125
D(on)
GS
Single Pulse
T
A
> minimum V
= 25 °C
V
150
DS
DS(on)
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
1
10
*
-1
GS
BVDSS Limited
at which R
I
DM
10
Limited
DS(on)
50
40
30
20
10
0.001
0
1
is specified
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
Single Pulse Power, Junction-to-Ambient
0.01
100
10
0.1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (s)
-
T
A
t
1
= P
S-83050-Rev. C, 29-Dec-08
1
t
Document Number: 72622
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 68 °C/W
100
600
600