SI4904DY-T1-GE3 Vishay, SI4904DY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4904DY-T1-GE3
• Description: MOSFET N-CH 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4904DY-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 2390pF @ 20V
• Power - Max: 3.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4904DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
4.0
3.2
2.4
1.6
0.8
0.0
0
Power Derating, Junction-to-Foot
25
D
T
is based on T
C
– Case Temperature (°C)
50
75
J(max)
12
10
8
6
4
2
0
0
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
Package Limited
25
125
T
C
50
Current Derating*
– Case Temperature (°C)
150
75
100
125
1.5
1.2
0.9
0.6
0.3
0.0
0
150
Power Derating, Junction-to-Ambient
25
T
A
– Ambient Temperature (°C)
50
Vishay Siliconix
75
Si4904DY
100
www.vishay.com
125
150
5