FDA38N30 Fairchild Semiconductor, FDA38N30 Datasheet - Page 2
![MOSFET N-CH 300V TO-3](/photos/13/92/139241/fda38n30_sml.jpg)
FDA38N30
Manufacturer Part Number
FDA38N30
Description
MOSFET N-CH 300V TO-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDA38N30.pdf
(8 pages)
Specifications of FDA38N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
312W
Mounting Type
Through Hole
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.07 Ohms
Forward Transconductance Gfs (max / Min)
6.3 S
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
38 A
Power Dissipation
312 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
60 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDA38N30
Manufacturer:
TI
Quantity:
2 000
Part Number:
FDA38N30
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDA38N30 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.7mH, I
3. I
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
BV
/
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Q
Q
Q
Switching Characteristics
t
t
t
t
Drain-Source Diode Characteristics
I
I
V
t
Q
Device Marking
Symbol
d(on)
d(off)
f
DSS
GSS
r
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
DSS
T
38A, di/dt 200A/s, V
DSS
FDA38N30
J
AS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 38A, V
DD
= 50V, R
DD
BV
Parameter
FDA38N30
Device
G
DSS
= 25, Starting T
, Starting T
J
= 25C
T
J
C
= 25C
= 25°C unless otherwise noted
Package
TO-3PN
I
I
V
V
V
V
V
V
V
f = 1.MHz
V
V
V
R
V
V
dI
D
D
DS
DS
GS
DS
GS
DS
DS
DS
GS
DD
G
GS
GS
F
= 250A, V
= 250A, Referenced to 25C
/dt = 100A/s
= 25V
= 300V, V
= 240V, T
= V
= 20V, I
= 25V, V
= 240V, I
= 0V, I
= ±30V, V
= 10V, I
= 10V
= 150V, I
= 0V, I
GS
2
, I
SD
SD
D
D
D
GS
Conditions
GS
D
D
GS
= 19A
= 38A
= 19A
= 38A
C
= 250A
GS
DS
= 38A
= 38A
= 10V
Reel Size
= 125
= 0V
= 0V, T
= 0V
= 0V
-
o
C
C
= 25
o
C
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min.
300
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
2600
0.07
500
215
125
170
315
0.3
6.3
4.0
60
60
20
28
40
-
-
-
-
-
-
-
-
Quantity
0.085
Max Units
±100
www.fairchildsemi.com
150
5.0
1.4
10
38
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
V/C
nC
nC
nC
C
A
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V