STP5NK60Z STMicroelectronics, STP5NK60Z Datasheet - Page 3

• Manufacturer Part Number: STP5NK60Z
• Description: MOSFET N-CH 600V 5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• For Use With: 497-6232 - BOARD EVAL ST7LITE1B,STP5NK60Z
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3196-5

ELECTRICAL CHARACTERISTICS (T
Table 6: On/Off
Table 7: Dynamic
Table 8: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
I
R
oss eq.
V
V
SDM
(BR)DSS
g
t
t
t
I
I
I
C
SD
DS(on)
C
r(Voff)
GS(th)
C
Q
d(on)
d(off)
Q
GSS
fs
RRM
DSS
I
Q
2. Pulse width limited by safe operating area.
3. C
Q
t
SD
t
oss
t
t
t
iss
rss
rr
r
r
c
gs
gd
f
(1)
rr
g
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
V
V
R
(see Figure 20)
V
R
(see Figure 20)
V
V
(see Figure 23)
I
I
V
(see Figure 21)
D
V
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
DD
GS
DD
G
G
DS
= 1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7Ω V
= 4.7Ω, V
= 5 A, V
= 5 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= ± 20V
= V
= 10V, I
= 8 V
= 0V, V
= 300 V, I
= 480V, I
= 400V, I
= 10V
= 30V, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
GS
,
, I
I
D
GS
DS
D
GS
D
GS
STP5NK60Z - STP5NK60ZFP- STD5NK60Z
j
GS
= 2.5 A
D
D
D
= 150°C
= 2.5 A
= 50µA
= 0V to 480V
= 0
= 5 A,
= 5 A,
= 0
= 10 V
= 2.5 A
= 10V
C
= 125 °C
GS
= 0
Min.
Min.
Min.
600
3
oss
when V
Typ.
3.75
Typ.
Typ.
690
485
1.2
2.7
90
20
40
16
25
36
25
12
10
24
26
20
11
4
6
DS
increases from 0 to 80%
Max.
Max.
Max.
±10
4.5
1.6
1.6
50
34
20
1
5
Unit
Unit
Unit
µA
µA
µA
nC
nC
nC
µC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
Ω
3/14
V
V
S
A
A
V
A