SI5499DC-T1-GE3 Vishay, SI5499DC-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI5499DC-T1-GE3
• Description: MOSFET P-CH D-S 1.5V 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5499DC-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 8V
• Input Capacitance (ciss) @ Vds: 1290pF @ 4V
• Power - Max: 6.2W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -6A
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 77mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -550mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5499DC-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73321.
Document Number: 73321
S-83054-Rev. C, 29-Dec-08
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
0.2
0.05
0.02
-4
0.1
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
Single Pulse
Single Pulse
0.02
10
-3
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
Vishay Siliconix
t
2
DM
Z
thJA
thJA
100
Si5499DC
t
t
1
2
(t)
= 84 °C/W
www.vishay.com
600
10
7