FDME510PZT Fairchild Semiconductor, FDME510PZT Datasheet - Page 2

• Manufacturer Part Number: FDME510PZT
• Description: MOSFET P-CH 20V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDME510PZT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1490pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 31 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 5 A
• Power Dissipation: 1.4 W
• Forward Transconductance Gfs (max / Min): 21 S
• Gate Charge Qg: 16 nC
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDME510PZTTR

©2010 Fairchild Semiconductor Corporation
FDME510PZT Rev.C1
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
iss
oss
rss
SD
∆T
∆T
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 60 °C/W when mounted on
a 1 in
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
2
= 25 °C unless otherwise noted
pad of 2 oz copper.
I
I
V
V
V
I
V
V
V
V
V
T
V
V
f = 1 MHz
V
V
V
V
V
I
D
D
D
F
J
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DD
GS
GS
= -250 µA, V
= -250 µA, referenced to 25 °C
= -250 µA, referenced to 25 °C
= -6 A, di/dt = 100 A/µs
= 125 °C
= -16 V, V
= -5 V, I
= ±8 V, V
= V
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -1.5 V, I
= -4.5 V, I
= -10 V, V
= -10 V, I
= -4.5 V, R
= -10 V, I
= -4.5 V
= 0 V, I
DS
2
Test Conditions
, I
S
D
D
D
= -1.6 A
DS
D
GS
D
D
D
D
D
= -6 A
GS
= -250 µA
GEN
= -6 A
GS
= -6 A
= -6 A
= -4 A
= -3 A
= -2 A
= -5 A ,
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
(Note 2)
θJC
is guaranteed by design while R
-0.4
Min
-20
b. 175 °C/W when mounted on a
minimum pad of 2 oz copper.
1120
-0.6
155
140
-0.5
6.5
1.6
Typ
38
16
10
93
54
16
-13
31
38
48
57
40
21
4
3
1490
θCA
-1.2
Max
210
210
149
-1.0
100
±10
61
29
13
16
86
22
www.fairchildsemi.com
37
50
65
60
-1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
nC
nC
nC
µA
µA
ns
ns
ns
ns
ns
V
V
V
S