FDC3535 Fairchild Semiconductor, FDC3535 Datasheet - Page 4

• Manufacturer Part Number: FDC3535
• Description: MOSFET P-CH 80V 6-SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC3535

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 183 mOhm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 880pF @ 40V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 147 mOhms
• Gate Charge Qg: 14 nC
• Forward Transconductance Gfs (max / Min): 6.3 S
• Drain-source Breakdown Voltage: - 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.1 A
• Power Dissipation: 1.6 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC3535TR

©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C
Typical Characteristics
0.005
0.01
0.1
10
20
10
7
6
5
4
3
2
1
Figure 7.
0.01
8
6
4
2
0
1
0.1
0
Figure 9.
THIS AREA IS
LIMITED BY r
I
D
Figure 11.
= -2.1 A
-V
V
Switching Capability
DS
DD
3
Gate Charge Characteristics
SINGLE PULSE
T J = MAX RATED
R
T A = 25 o C
t
, DRAIN to SOURCE VOLTAGE (V)
AV
θ
= -30 V
JA = 175
Operating Area
Unclamped Inductive
, TIME IN AVALANCHE (ms)
DS(on)
Q
1
0.1
g
, GATE CHARGE (nC)
Forward Bias Safe
V
o C/W
6
T
DD
J
= 125
= -40 V
T
J
= 25
o
10
T
C
V
J
9
DD
T
o
= 25 °C unless otherwise noted
C
J
= 100
1
= -50 V
o
C
12
100
100 us
DC
1 ms
10 ms
100 ms
1 s
10 s
10
300
15
4
1000
1000
100
2.5
2.0
1.5
1.0
0.5
0.0
100
10
0.5
10
Figure 10.
0.1
25
1
10
Figure 12. Single Pulse Maximum
-4
f = 1 MHz
V
R
Current vs Ambient Temperature
GS
Figure 8.
θ
JA
= 0 V
= 78
10
-V
-3
50
V
DS
o
T
GS
Maximum Continuous Drain
Power Dissipation
C/W
to Source Voltage
C
, DRAIN TO SOURCE VOLTAGE (V)
,
= -10 V
10
Ambient TEMPERATURE (
Capacitance vs Drain
V
t, PULSE WIDTH (s)
GS
-2
1
= -4.5 V
75
10
-1
V
GS
= -10 V
100
1
10
SINGLE PULSE
R
T
C
C
C
A
θ
oss
rss
10
iss
JA
= 25
o
C )
= 175
125
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o
C
100
o
C/W
100
150
1000