FDMS7694 Fairchild Semiconductor, FDMS7694 Datasheet - Page 3

• Manufacturer Part Number: FDMS7694
• Description: MOSFET N-CH 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS7694

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 13.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 1410pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.1 mOhms
• Forward Transconductance Gfs (max / Min): 55 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 44 A
• Power Dissipation: 27 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS7694TR

FDMS7694 Rev.C1
Typical Characteristics
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
50
40
30
20
10
50
40
30
20
10
Figure 3. Normalized On Resistance
0
0
Figure 1.
-75
1
0
Figure 5. Transfer Characteristics
I
V
D
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
= 14 A
DS
-50
= 10 V
vs Junction Temperature
= 5 V
V
V
V
V
V
GS
GS
GS
DS
1
T
GS
-25
On Region Characteristics
J
= 4.5 V
= 5 V
= 10 V
,
,
, GATE TO SOURCE VOLTAGE (V)
2
DRAIN TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0
T
J
2
= 150
25
μ
s
3
o
C
50
T
J
3
= 25 °C unless otherwise noted
75
T
J
μ
s
= -55
T
4
100 125 150
o
J
C )
V
V
= 25
4
GS
GS
o
C
= 4 V
= 3.5 V
o
C
5
5
3
0.01
100
0.1
10
30
25
20
15
10
1
5
4
3
2
1
0
5
Figure 2.
Figure 4.
0.2
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
T
= 0 V
J
V
= 150
SD
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0.4
V
, BODY DIODE FORWARD VOLTAGE (V)
10
Normalized On-Resistance
V
GS
On-Resistance vs Gate to
GS
Source Voltage
o
4
= 3.5 V
Source to Drain Diode
,
C
GATE TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
0.6
20
V
GS
6
= 4 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
D
T
J
= 14 A
0.8
= 25
μ
30
s
T
o
J
C
= -55
T
V
J
8
GS
= 25
1.0
www.fairchildsemi.com
T
o
40
V
C
= 4.5 V
J
V
GS
= 125
GS
o
C
= 10 V
= 5 V
μ
o
s
C
1.2
10
50