SIR882DP-T1-GE3 Vishay, SIR882DP-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIR882DP-T1-GE3
• Description: MOSFET N-CH 100V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIR882DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 1930pF @ 50V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 7100µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIR882DP-T1-GE3TR

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65932
S10-2681-Rev. B, 22-Nov-10
100
20
80
60
40
0
0
25
Power, Junction-to-Case
T
D
C
50
is based on T
- Case Temperature (°C)
75
J(max)
16
80
64
48
32
0
100
0
Package Limited
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
25
T
C
150
Current Derating*
50
- Case Temperature (°C)
75
100
0.5
2.5
2.0
1.5
1.0
0
125
0
150
25
Power, Junction-to-Ambient
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
SiR882DP
www.vishay.com
125
150
5