SUD19N20-90-E3 Vishay, SUD19N20-90-E3 Datasheet

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... 200 0.105 O-252 Drain Connected Ordering Information: SUD19N20-90-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...

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... SUD19N20-90 Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

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... Transconductance 2500 2000 1500 1000 500 C rss C oss Drain-to-Source Voltage (V) DS Capacitance Document Number: 71767 S10-2245-Rev. E, 04-Oct- ° °C 125 ° iss 120 160 200 SUD19N20-90 Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0. 0.05 0. Drain Current (A) D On-Resistance vs ...

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... SUD19N20-90 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3 2.5 2.0 1.5 1.0 0.5 0 Junction Temperature ( J On-Resistance vs. Junction Temperature THERMAL RATINGS Case Temperature (°C) C Maximum Avalanche Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...