FCH47N60N Fairchild Semiconductor, FCH47N60N Datasheet - Page 2

• Manufacturer Part Number: FCH47N60N
• Description: MOSFET N-CH 600V 47A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS™r

Specifications of FCH47N60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 23.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 151nC @ 10V
• Input Capacitance (ciss) @ Vds: 6700pF @ 100V
• Power - Max: 368W
• Mounting Type: Through Hole
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 51.5 mOhms
• Forward Transconductance Gfs (max / Min): 56 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 47 A
• Power Dissipation: 368 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCH47N60N Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
C
C
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
g(tot)
gs
gd
rr
AS
SD
Device Marking
DSS
Symbol
J
= 15.7A, R
≤ 47A, di/dt ≤ 200A/μs, V
DSS
eff.
FCH47N60N
G
= 25Ω, Starting T
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
≤ 380V, Starting T
J
FCH47N60N
= 25°C
Device
Parameter
J
= 25°C
T
C
= 25
o
C unless otherwise noted
Package
TO-247
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
V
Drain Open
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
DS
DS
GS
GEN
F
= 1mA, V
= 1mA, Referenced to 25
/dt = 100A/μs
= 480V, V
= 480V, V
= 0V, I
= ±30V, V
= 40V, I
= 100V, V
= 380V, V
= 0V to 380V, V
= 380V, I
= 380V, I
= 0V, I
= V
= 10V, I
= 10V
= 4.7Ω
DS
Test Conditions
, I
SD
2
SD
GS
D
Reel Size
D
D
D
D
= 23.5A
= 23.5A
= 23.5A
GS
GS
= 23.5A
DS
= 250μA
GS
GS
= 0V, T
= 23.5A
= 23.5A,
-
= 0V
= 0V, T
= 0V
= 0V
= 0V, f = 1MHz
GS
C
= 0V
= 25
C
= 125
o
C
o
C
(Note 4)
(Note 4)
o
Tape Width
C
-
Min.
600
-
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5037
Typ.
0.78
51.5
495
200
108
511
115
135
2.5
0.9
12
21
34
56
11
22
-
-
-
-
-
-
-
9
-
Quantity
www.fairchildsemi.com
Max.
±100
6700
62.0
100
270
151
141
280
4.0
1.2
10
47
32
28
54
-
-
30
-
-
4
Units
V/
mΩ
μA
nC
nC
nC
nA
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
μC
V
Ω
A
A
V
V
S
o
C