STD7N52DK3 STMicroelectronics, STD7N52DK3 Datasheet - Page 3

• Manufacturer Part Number: STD7N52DK3
• Description: MOSFET N-CH 620V 6.2A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperFREDmesh3™r

Specifications of STD7N52DK3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.15 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 870pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.15 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10707-2

STD7N52DK3, STF7N52DK3, STP7N52DK3
1
Electrical ratings
Table 2.
1. Limited by package
2. Pulse width limited by safe operating area
3. I
Table 3.
1. When mounted on 1inch² FR-4 board, 2 oz Cu
V
R
Symbol
Symbol
R
dv/dt
R
ESD(G-S)
thj-pcb
I
DM
P
V
thj-case
di/dt
thj-amb
V
V
E
T
I
SD
I
I
TOT
AR
T
T
ISO
GS
DS
AS
stg
D
D
j
l
(2)
(3)
≤ 6 A, peak V
(1)
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Gate source ESD(HBM-C = 100 pF,
R = 1.5 kΩ)
Peak diode recovery voltage slope
Diode reverse recovery current slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Absolute maximum ratings
Thermal data
DS
C
j
= 25°C, I
= 25 °C)
< V
(BR)DSS.
Parameter
Parameter
D
C
Doc ID 16387 Rev 2
= I
= 25 °C
GS
AR
= 0)
, V
DD
C
C
= 25 °C
= 100 °C
= 50 V)
j
max)
TO-220
TO-220
62.5
300
1.39
24
90
6
4
DPAK
DPAK
-55 to 150
50
Value
Value
2500
± 30
525
100
400
150
20
3
TO-220FP
TO-220FP
Electrical ratings
24
2500
62.5
6
4
300
25
5
(1)
(1)
(1)
°C/W
°C/W
°C/W
V/ns
A/µs
Unit
Unit
mJ
°C
°C
W
°C
V
V
A
A
A
A
V
V
3/16