STP60N3LH5 STMicroelectronics, STP60N3LH5 Datasheet - Page 12

• Manufacturer Part Number: STP60N3LH5
• Description: MOSFET N-CH 30V 48A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP60N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.4 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0114 Ohms
• Forward Transconductance Gfs (max / Min): 1.1 V
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 48 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Gate Charge Qg: 8.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10713-5

Package mechanical data
12/21
Table 9.
Figure 21. DPAK footprint
a. All dimension are in millimeters
Dim.
A1
A2
D1
E1
V2
b4
e1
L1
L2
L4
c2
A
D
E
H
R
b
c
e
L
DPAK (TO-252) mechanical data
6.7
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0°
1
STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S
(a)
Doc ID 14079 Rev 4
6.7
1.8
Typ.
5.10
4.70
2.28
2.80
0.80
0.20
mm
3
1.6
1.6
2.3
2.3
10.10
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
8°
1
AM08850v1