IXTA36N30P IXYS, IXTA36N30P Datasheet
首页 Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTA36N30P
Manufacturer Part Number
IXTA36N30P
Description
MOSFET N-CH 300V 36A TO-263
Specifications of IXTA36N30P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2250pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
36
Rds(on), Max, Tj=25°c, (?)
0.11
Ciss, Typ, (pf)
2250
Qg, Typ, (nc)
70
Trr, Typ, (ns)
250
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXTA36N30P TRL
Part Number:
IXTA36N30P TRL
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2005 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-3P
TO-220
TO-263
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
G
= 0.5 I
= 10 Ω
DS
= 0
D25
(TO-3P / TO-220)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
IXTA 36N30P
IXTP 36N30P
IXTQ 36N30P
JM
,
300
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
92
300
300
±30
±40
300
150
300
260
1.0
5.5
36
90
36
30
10
4
3
±100
200
110
Max.
5.5
1
V/ns
m Ω
mJ
° C
nA
µA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
g
J
TO-263 (IXTA)
TO-220 (IXTP)
TO-3P (IXTQ)
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
G
DS(on)
DSS
G = Gate
S = Source
D
G
S
D
G
=
=
≤ ≤ ≤ ≤ ≤
S
S
110 mΩ Ω Ω Ω Ω
300
D = Drain
TAB = Drain
DS99155E(10/05)
36
D(TAB)
D(TAB)
D(TAB)
A
V
Related parts for IXTA36N30P
IXTA36N30P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2005 IXYS All rights reserved IXTA 36N30P IXTP 36N30P IXTQ 36N30P Maximum Ratings 300 = 1 MΩ 300 GS ±30 ± 1.0 ≤ DSS 300 -55 ... +150 150 -55 ... +150 ...
... A, -di/dt = 100 A/µ 100 TO-263 (IXTA) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. ...
... V - Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 4 10V 3 125º 2.6 2.2 1.8 1 Amperes D © 2005 IXYS All rights reserved º 3.5 4 4.5 5 º C 3.1 2.8 2.5 2.2 7V 1.9 1.6 6V 1.3 0 25ºC ...
... Source-To-Drain Voltage 100 125º 0.4 0.5 0.6 0.7 0.8 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 7 25º 1.1 1.2 1.3 1000 C iss 100 C oss 10 C rss 1 ...
... Fig . © 2005 IXYS All rights reserved IXTA 36N30P IXTP 36N30P illis IXTQ 36N30P ...
Related keywords
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