IXTP14N60PM IXYS, IXTP14N60PM Datasheet - Page 4

• Manufacturer Part Number: IXTP14N60PM
• Description: MOSFET N-CH 600V 7A TO-220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTP14N60PM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 7.0
• Rds(on), Max, Tj=25°c, (?): 0.550
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 36
• Trr, Typ, (ns): 500
• Pd, (w): 75
• Rthjc, Max, (k/w): 1.66
• Package Style: OVERMOLED TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
50
45
40
35
30
25
20
15
10
100
50
45
40
35
30
25
20
15
10
10
5
0
5
0
1
5.0
0.4
0
f
5.5
= 1 MHz
0.5
5
Fig. 9. Forward Voltage Drop of
6.0
10
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
6.5
Intrinsic Diode
T
J
15
V
V
= 125ºC
V
GS
SD
0.7
DS
T
7.0
J
- Volts
- Volts
- Volts
= 125ºC
- 40ºC
20
25ºC
7.5
0.8
25
8.0
C iss
C oss
C rss
T
0.9
J
= 25ºC
30
8.5
1.0
35
9.0
9.5
1.1
40
100
10
27
24
21
18
15
12
10
1
0
9
6
3
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
J
V
I
I
Fig. 12. Forward-Bias Safe Operating Area
D
G
R
T
T
Single Pulse
= - 40ºC
DS
5
J
C
4
DS(on)
= 7A
= 10mA
125ºC
= 150ºC
= 300V
= 25ºC
25ºC
10
Limit
8
Fig. 8. Transconductance
15
Fig. 10. Gate Charge
12
Q
G
- NanoCoulombs
I
D
20
- Amperes
16
V
DS
IXTP14N60PM
100
- Volts
25
20
DC
30
24
10ms
35
28
1ms
40
32
45
25µs
100µs
36
1000
50