STW17N62K3 STMicroelectronics, STW17N62K3 Datasheet - Page 4

• Manufacturer Part Number: STW17N62K3
• Description: MOSFET N-CH 620V 15A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STW17N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 50V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Forward Transconductance Gfs (max / Min): 1.6 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 94 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10717-5

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 5.
Table 6.
1. C
Table 7.
C
Symbol
V
Symbol
Symbol
C
OSS eq
V
R
t
t
(BR)DSS
increases from 0 to 80% V
d(on)
d(off)
C
I
I
C
C
Q
GS(th)
Q
= 25 °C unless otherwise specified)
DS(on
GSS
R
DSS
Q
oss eq
t
t
oss
r
f
iss
rss
gs
gd
G
g
(1)
. is defined as a constant equivalent capacitance giving the same charging time as C
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
V
R
(see
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
DD
GS
DD
DS
DS
GS
DS
GS
G
= 1 mA, V
= 4.7 Ω, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz, V
= 0, V
= 10 V
= 310 V, I
= ± 20 V
= V
= 10 V, I
= 496 V, I
Figure
Figure
Test conditions
Test conditions
Test conditions
GS
DS
, I
18)
19)
GS
D
D
GS
= 0 to 496 V
STF17N62K3, STP17N62K3, STW17N62K3
D
D
= 100 µA
= 7.5 A
= 0
= 7.5 A,
= 15 A,
= 10 V
C
=125 °C
GS
= 0
Min.
Min.
Min.
620
3
2500
Typ.
Typ.
Typ.
3.75
0.34
195
211
2.7
25
26
91
63
26
94
54
6
oss
when V
Max.
Max.
± 10
Max
0.38
4.5
50
1
D
S
Unit
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
V
V