NDD03N50ZT4G ON Semiconductor, NDD03N50ZT4G Datasheet - Page 3

• Manufacturer Part Number: NDD03N50ZT4G
• Description: MOSFET N-CH 500V 2.6A DPAK
• Manufacturer: ON Semiconductor

Specifications of NDD03N50ZT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 274pF @ 25V
• Power - Max: 58W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDD03N50ZT4G; NDD03N50ZT4GOSTR

5.00
4.75
4.50
4.25
4.00
3.75
3.50
3.25
3.00
2.75
2.50
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
−50
5.0
0
Figure 3. On−Region versus Gate−to−Source
V
I
D
GS
5.5
= 1.15 A
Figure 5. On−Resistance Variation with
−25
Figure 1. On−Region Characteristics
= 10 V
V
V
DS
GS
T
6.0
5
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
6.5
V
GS
25
= 10 V
Temperature
10
7.0
Voltage
7.5
50
15
8.0
75
7.0 V
8.5
6.5 V
6.0 V
5.5 V
5.0 V
100
I
T
D
20
9.0
J
= 1.15 A
= 25°C
http://onsemi.com
125
9.5 10.0
25
150
3
1.15
1.10
1.05
1.00
0.95
0.90
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.4
3.3
3.2
3.1
3.0
2.9
2.8
2.7
2.6
2.5
−50
0.0
3
V
I
V
Figure 6. BV
T
D
GS
DS
J
T
= 1 mA
Figure 4. On−Resistance versus Drain
= 25°C
J
−25
= 10 V
= 25 V
= 150°C
4
V
0.5
Figure 2. Transfer Characteristics
GS
T
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
Current and Gate Voltage
0
I
5
D
DSS
, DRAIN CURRENT (A)
1.0
25
Variation with Temperature
T
6
J
= −55°C
1.5
50
T
7
J
= 25°C
75
2.0
8
100
2.5
125
9
150
3.0
10