NTTFS5811NLTWG ON Semiconductor, NTTFS5811NLTWG Datasheet
NTTFS5811NLTWG
Specifications of NTTFS5811NLTWG
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NTTFS5811NLTWG Summary of contents
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... 260 °C (Note: Microdot may be in either location) L Device NTTFS5811NLTAG NTTFS5811NLTWG Value Unit 3.8 °C/W †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification 47 Brochure, BRD8011/D. 1 http://onsemi.com R MAX I MAX ...
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ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature V Coefficient Drain−to−Source On Resistance Forward ...
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100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.016 0.014 0.012 0.010 0.008 0.006 0.004 ...
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C iss 1600 1400 1200 1000 800 600 400 C oss 200 C rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 ...
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Duty Cycle = 0.5 0.2 10 0.1 0.05 1 0.02 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 100 1000 ...
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... M 0.57 0.75 0.47 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...