NTD6415ANLT4G ON Semiconductor, NTD6415ANLT4G Datasheet

NTD6415ANLT4G

Manufacturer Part Number

NTD6415ANLT4G

Description

MOSFET N-CH 100V 23A 56MOHM DPAK

Manufacturer

ON Semiconductor

Datasheet

1.NTD6415ANLT4G.pdf (6 pages)

Specifications of NTD6415ANLT4G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

52 mOhm @ 10A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

23A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

35nC @ 10V

Input Capacitance (ciss) @ Vds

1024pF @ 25V

Power - Max

83W

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

44 mOhms to 52 mOhms

Forward Transconductance Gfs (max / Min)

24 S

Drain-source Breakdown Voltage

92 V to 100 V

Continuous Drain Current

1 uA to 100 uA

Power Dissipation

83 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD6415ANLT4G

Manufacturer:

ON Semiconductor

Quantity:

3 800

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD6415ANLT4G

Manufacturer:

Quantity:

12 500

Company:

H&T Electronics

Part Number:

NTD6415ANLT4G

Quantity:

4 500

Current page: 1 of 6
Download datasheet (260Kb)

NTD6415ANL

N- -Channel Power MOSFET

100 V, 23 A, 56 mΩ, Logic

Level

Features



Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size,

 Semiconductor Components Industries, LLC, 2010

March, 2010 - - Rev. 0

MAXIMUM RATINGS

THERMAL RESISTANCE RATINGS

Drain--to--Source Voltage

Gate--to--Source Voltage -- Continuous

Continuous Drain

Current

Power Dissipation

Pulsed Drain Current

Operating and Storage Temperature Range

Source Current (Body Diode)

Single Pulse Drain--to--Source Avalanche

Energy (V

23 A, L = 0.3 mH, R

Lead Temperature for Soldering

Purposes, 1/8 from Case for 10 Seconds

Junction--to--Case (Drain) -- Steady State

Junction--to--Ambient -- Steady State (Note 1)

Compliant

Low R

100% Avalanche Tested

AEC- -Q101 Qualified

These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS

(Cu Area 1.127 sq in [2 oz] including traces).

DS(on)

= 50 Vdc, V

Parameter

= 25 Ω)

Steady

State

= 10 Vdc, I

= 25C unless otherwise noted)

= 10 ms

= 100C

= 25C

L(pk)

Symbol

, T

DSS

θJC

θJA

stg

--55 to

Value

+175

±20

Max

100

260

1.8

C/W

Unit

C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

(BR)DSS

100 V

ORDERING INFORMATION

6415ANL = Device Code

MARKING DIAGRAM

& PIN ASSIGNMENT

Gate

http://onsemi.com

56 mΩ @ 4.5 V

52 mΩ @ 10 V

CASE 369AA

1 2

DS(on)

= Year

= Work Week

= Pb--Free Package

4 Drain

STYLE 2

Drain

DPAK

Publication Order Number:

MAX

Source

NTD6415ANL/D

23 A

MAX

Related parts for NTD6415ANLT4G

NTD6415ANLT4G Summary of contents

Page 1

NTD6415ANL N- -Channel Power MOSFET 100 mΩ, Logic Level Features  Low R DS(on)  100% Avalanche Tested  AEC- -Q101 Qualified  These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM ...

Page 2

... Pulse Test: Pulse Width  300 ms, Duty Cycle  2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTD6415ANLT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/ 25 ...

Page 3

DRAIN--TO--SOURCE VOLTAGE (V) DS Figure 1. On- -Region Characteristics 0.050 0.048 0.046 0.044 0.042 0.040 ...

Page 4

C iss 1000 500 C rss C oss DRAIN--TO--SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 5

Duty Cycle = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 5 0 ...

Page 6

... PL 0.13 (0.005) *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords

NTD6415ANLT4G datasheet
NTD6415ANLT4G data sheet
NTD6415ANLT4G pdf datasheet
NTD6415ANLT4G component
NTD6415ANLT4G part
NTD6415ANLT4G distributor
NTD6415ANLT4G RoHS
NTD6415ANLT4G datasheet download