NDF11N50ZG ON Semiconductor, NDF11N50ZG Datasheet - Page 3

• Manufacturer Part Number: NDF11N50ZG
• Description: MOSFET N-CH 500V .52OHM TO-220FP
• Manufacturer: ON Semiconductor

Specifications of NDF11N50ZG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1375pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDF11N50ZG; NDF11N50ZGOS

1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
25
20
15
10
5
0
5.5
−50
0
Figure 3. On−Region versus Gate−to−Source
V
6.0
I
D
GS
−25
Figure 5. On−Resistance Variation with
Figure 1. On−Region Characteristics
= 4.5 A
V
V
= 10 V
DS
GS
T
6.5
5
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
7.0
25
Temperature
10
V
7.5
Voltage
GS
5.0 V
50
= 10 V
6.0 V
8.0
5.5 V
6.5 V
15
75
8.5
7.0 V
TYPICAL CHARACTERISTICS
100
9.0
20
T
I
D
J
= 4.5 A
http://onsemi.com
= 25°C
125
9.5
10.0
150
25
3
0.70
0.65
0.60
1.00
0.95
0.90
0.85
0.80
0.75
0.55
0.50
0.45
0.40
1.15
1.10
1.05
1.00
0.95
0.90
25
20
15
10
5
0
50
0
3
V
V
T
I
Figure 6. BV
GS
DS
D
J
1
= 25°C
Figure 4. On−Resistance versus Drain
= 1 mA
= 10 V
25
= 25 V
T
V
4
Figure 2. Transfer Characteristics
J
GS
2
T
= 150°C
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
Current and Gate Voltage
0
3
I
D
5
, DRAIN CURRENT (A)
DSS
4
25
Variation with Temperature
6
5
T
J
50
= −55°C
6
T
7
J
= 25°C
75
7
8
8
100
9
125
9
10
150
11
10