NCP5359AMNR2G ON Semiconductor, NCP5359AMNR2G Datasheet - Page 4

• Manufacturer Part Number: NCP5359AMNR2G
• Description: IC MOSFET GATE DVR DUAL 8-DFN
• Manufacturer: ON Semiconductor
• Type: High Side/Low Sider

Specifications of NCP5359AMNR2G

• Configuration: High and Low Side, Synchronous
• Input Type: PWM
• Delay Time: 10.0ns
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 30V
• Voltage - Supply: 10 V ~ 13.2 V
• Operating Temperature: 0°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-VFDFN Exposed Pad
• Product: MOSFET Gate Drivers
• Propagation Delay Time: 25 ns
• Supply Voltage (max): 15 V
• Supply Voltage (min): - 0.3 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: 0 C
• Output Voltage: 35 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Peak: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Latchup Current Maximum Rating: 100 mA per JEDEC standard: JESD78.
2. Moisture Sensitivity Level (MSL): 1&3 per IPC/JEDEC standard: J−STD−020A.
3. The maximum package power dissipation limit must not be exceeded.
NOTE:
MAXIMUM RATINGS
Thermal Characteristics, Plastic Package
Thermal Resistance Junction−to−Air
Operating Junction Temperature Range
Operating Ambient Temperature Range
Storage Temperature Range
Moisture Sensitivity Level
MAXIMUM RATINGS
PD +
Pin Symbol
This device is ESD sensitive. Use standard ESD precautions when handling.
DRVH
DRVL
PWM
GND
BST
Vcc
SW
EN
TJ(max) * TA
RqJA
Rating
DRVH and DRVL Control Input
Main Supply Voltage Input
(Bootstrap Supply Return)
Bootstrap Supply voltage
High Side Driver Output
Low Side Driver Output
Switching Node
Enable Pin
Pin Name
Ground
(20.2 sq mm, 2 oz Cu) DFN8
http://onsemi.com
4
SOIC−8
SOIC−8
DFN8
40 V ≤ 50 ns wrt / GND
40 V ≤ 50 ns wrt / GND
35 V ≤ 50 ns wrt / GND
Symbol
R
35 V wrt / GND
35 V wrt / GND
MSL
T
15 V wrt / SW
15 V wrt / SW
T
T
BST + 0.3 V
qJA
stg
Vcc + 0.3 V
A
J
V
15 V
6 V
6 V
0 V
MAX
− 55 to +150
0 to +150
0 to +85
Value
178
330
−2 V (200 ns) wrt / SW
1
1
−0.3 V wrt / SW
−0.3 V wrt / SW
−10 V (200 ns)
−5 V (200 ns)
−1 VDC
−0.3 V
−0.3 V
−0.3 V
−0.3 V
V
0 V
MIN
°C/W
Unit
°C
°C
°C
−