TWR-MCF51JE Freescale Semiconductor, TWR-MCF51JE Datasheet - Page 44

• Manufacturer Part Number: TWR-MCF51JE
• Description: TOWER SYSTEM BOARD MCF51JE
• Manufacturer: Freescale Semiconductor
• Series: ColdFire®, Flexis™r
• Type: MCUr

Specifications of TWR-MCF51JE

• Contents: Board
• Data Bus Width: 32 bit
• Interface Type: RS-232, RS-485, Ethernet, CAN, USB
• Silicon Manufacturer: Freescale
• Core Architecture: Coldfire
• Core Sub-architecture: Coldfire V1
• Silicon Core Number: MCF51J
• Silicon Family Name: Flexis - MCF51JE
• Rohs Compliant: Yes
• For Use With/related Products: Freescale Tower System, MCF51JE
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1
2
3
4
Preliminary Electrical Characteristics
3.14
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory chapter in the Reference
Manual for this device (MCF51JE256RM).
1-4
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating
approximate time to program and erase.
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how Freescale defines
typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25°C using the
Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin EB618, Typical
Data Retention for Nonvolatile Memory.
10
#
1
2
3
4
5
6
7
8
9
Supply voltage for program/erase
-40°C to 105°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
Flash Specifications
to T
H
= –40°C to + 105°C
4
Characteristic
2
2
1
3
2
2
Preliminary — Subject to Change
Table 24. Flash Characteristics
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
Read
prog
10,000
Min
150
1.8
1.8
15
—
5
100,000
Typical
20,000
4000
100
—
—
—
—
—
9
4
Max
6.67
200
3.6
3.6
—
—
—
Freescale Semiconductor
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
DD
supply.
C
D
D
D
D
C
C
P
P
P
P