NE34018-EVNF19 CEL, NE34018-EVNF19 Datasheet

NE34018-EVNF19

Manufacturer Part Number

NE34018-EVNF19

Description

EVAL BOARD FOR NE34018 1.9GHZ

Manufacturer

CEL

Type

Small Signal GaAs FETr

Datasheet

1.NE34018-T1.pdf (10 pages)

Specifications of NE34018-EVNF19

Contents

Board

For Use With/related Products

NE34018@1.9GHz

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant, Lead free / RoHS Compliant

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FEATURES

• LOW COST MINIATURE PLASTIC PACKAGE

• LOW NOISE FIGURE:

• HIGH ASSOCIATED GAIN:

• L

• TAPE & REEL PACKAGING

DESCRIPTION

NEC's NE34018 is a low cost gallium arsenide Hetero-Junc-

tion FET housed in a miniature (SOT-343) plastic surface

mount package. The device is fabricated using ion implanta-

tion for improved RF and DC performance, reliability, and

uniformity. Its low noise figure, high gain, small size and

weight make it an ideal low noise amplifier transistor in the 1-

3 GHz frequency range. The NE34018 is suitable for GPS,

PCS, WLAN, MMDS, and other commercial applications.

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

ELECTRICAL CHARACTERISTICS

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production

line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.

(SOT-343)

0.6 dB typical at 2 GHz

16.0 dB typical at 2 GHz

SYMBOL

O/P I

TH(CH-A)

GSO

= 0.6 µ µ µ µ µ m, W

DSS

1dB

Noise Figure at V

Associated Gain at V

Output Power at 1 dB Gain Compression Point, f = 2 GHz

Gain at P

Output I

Saturated Drain Current at V

Pinch Off Voltage at V

Transconductance at V

Gate to Source Leakage Current at V

Thermal Resistance (Channel to Ambient)

= 400 µ µ µ µ µ m

= 2 V, I

= 3 V, I

= 2 V, I

= 3 V, I

= 2 V, I

1dB

at f = 2 GHz, ∆f = 1 MHz

, f = 2 GHz

PARAMETERS AND CONDITIONS

= 30 mA

= 10 mA

= 30 mA

= 10 mA

= 30 mA

= 2 V, I

PACKAGE OUTLINE

GaAs HJ-FET L TO S BAND

= 2 V, I

PART NUMBER

= 2 V, I

= 5 mA, f = 2 GHz

= 2 V, V

LOW NOISE AMPLIFIER

= 5 mA, f = 2 GHz

= 100 µA

= 5 mA

(New Plastic Package)

= 25°C)

= -3 V

= 0 V

18 Package

0.5

California Eastern Laboratories

NOISE FIGURE & ASSOCIATED

UNITS

˚C/W

dBm

µA

GAIN vs. FREQUENCY

Frequency, f (GHz)

= 3 V, I

MIN

14.0

-2.0

= 20 mA

NE34018

5 6 7 8 910

NE34018

TYP

16.0

16.5

17.0

17.5

-0.8

833

0.6

0.5

SOT-343 Style

MAX

120

-0.2

1.0

Related parts for NE34018-EVNF19

NE34018-EVNF19 Summary of contents

Page 1

... Its low noise figure, high gain, small size and weight make it an ideal low noise amplifier transistor in the 1- 3 GHz frequency range. The NE34018 is suitable for GPS, PCS, WLAN, MMDS, and other commercial applications. NEC's stringent quality assurance and test procedures en- sure the highest reliability and performance ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Drain Voltage GDO V Gate to Source Voltage GSO I Drain Current DS T Channel Temperature CH T Storage Temperature STG P Total Power Dissipation T ...

Page 3

TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -. ...

Page 4

TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -. ...

Page 5

TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 (GHz) MAG ANG 0.50 0.969 -18.6 0.60 0.958 -22.1 0.70 0.946 -25.7 0.80 0.931 -29.2 0.90 0.916 -32.7 1.00 0.899 -36.1 1.20 0.864 -42.9 ...

Page 6

... NE34018 TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -. FREQUENCY S 11 (GHz) MAG ANG 0.50 0.977 -17.0 0.60 0.969 -20.2 0.70 0.959 -23.5 0.80 0.948 -26.8 0.90 0.937 -30.0 1.00 0.923 -33.2 1.20 0.895 -39.6 1.40 0.863 -45.8 1.60 ...

Page 7

... NE34018 MAG 22 MAG ANG (dB) 0.667 -7.3 0.215 27.335 0.663 -8.8 0.255 26.528 0.655 -10.2 0.282 25.846 0.649 -11.6 ...

Page 8

... NE34018 NONLINEAR MODEL SCHEMATIC LG_PKG GATE 0.18nH FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -0.6885 RG VTOSC 0 RD ALPHA 5 RS BETA 0.1838 RGMET GAMMA 0.038 KF GAMMADC 0. 1.8 TNOM DELTA 0.25 XTI VBI 0 3e-13 VTOTC N 1 BETATCE RIS 0 FFE RID 0 TAU 4e-12 CDS ...

Page 9

... CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE ORDERING INFORMATION PART NUMBER NE34018-A NE34018-TI-63-A +0.10 0.3 -0.05 NE34018-TI-64-A (LEADS 0.65 1.3 0.65 Pin Connections 1. Source 2. Gate 3. Source 4. Drain +0 ...

Page 10

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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