RMPA1959 Fairchild Semiconductor, RMPA1959 Datasheet - Page 2

• Manufacturer Part Number: RMPA1959
• Description: IC MOD RF POWER AMP 10PIN 4X4LCC
• Manufacturer: Fairchild Semiconductor
• Type: Power Amplifierr

Specifications of RMPA1959

• Current - Supply: 50mA
• Frequency: 1.85GHz ~ 1.91GHz
• Gain: 23dB ~ 25dB
• Noise Figure: 4dB
• Package / Case: 11-LCC
• Rf Type: CDMA, CDMA2000, PCS
• Voltage - Supply: 3V ~ 4.2V
• Number Of Channels: 1
• Frequency (max): 1.91GHz
• Output Power: 28@1880MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 3V
• Single Supply Voltage (typ): 3.4V
• Single Supply Voltage (max): 4.2V
• Package Type: PLCC
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Operating Temperature Classification: Commercial
• Operating Temp Range: -30C to 85C
• Pin Count: 10
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant
• Other names: RMPA1959TR

©2004 Fairchild Semiconductor Corporation
Module Block Diagram
Electrical Characteristics
Notes:
1: All parameters met at Tc = +25°C, Vcc = +3.4V, f = 1880 MHz, and load VSWR ≤ 1.2:1.
2: All phase angles.
3: Guaranteed by design
CDMA Operation
General Characteristics
DC Characteristics
Symbol
Icc (off)
ACPR1
ACPR2
VSWR
2fo-5fo
Rx No
PAEd
SSg
Iccq
Iref
Gp
Itot
NF
P
Tc
S
f
O
Figure 1. RMPA1959 US PCS CDMA Power Amplifier Module Functional Block Diagram
VCC1, VCC2
Operating Frequency
Small-Signal Gain
Power Gain
Linear Output Power
PAEd (digital) @ +28 dBm
PAEd (digital) @ +16 dBm
PAEd (digital) @ +16 dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
±1.25 MHz Offset
±2.25 MHz Offset
Input Impedance
Noise Figure
Receive Band Noise Power
Harmonic Suppression
Spurious Outputs
Ruggedness w/Load Mismatch
Case Operating Temperature
Quiescent Current
Reference Current
Leakage Shutdown Current
(1, 10)
VREF
RF IN
(2)
(5)
Parameter
MATCHING
NETWORK
INPUT
2,3
1
INPUT STAGE
3
P
P
P
Vmode = 0V
Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode ≥ 2.0V, V
P
P
IS-95
P
P
P
P
P
P
Load VSWR ≤ 5.0:1
No permanent damage
Vmode ≥ 2.0V
P
No applied RF signal
BIAS
O
O
O
O
O
O
O
O
O
O
O
O
INPUT
STAGE
= 0dBm
= +28dBm, Vmode = 0V
= +16dBm, Vmode ≥ 2.0V
= +28dBm, Vmode = 0V
= +16dBm, Vmode = 2.0V
= +28dBm; Vmode = 0V
= +16dBm; Vmode = 2.0V
= +28dBm; Vmode = 0V
= +16dBm; Vmode = 2.0V
≤ +28dBm; 1850 to 1910 MHz
≤ +28dBm
≤ +28dBm
Vmode (4)
COLLECTOR
INTERSTAGE
CONTROL
MMIC
BIAS
MATCH
BIAS
Condition
CC
OUTPUT STAGE
= 1.4V
BIAS
OUTPUT
STAGE
PA MODULE
MATCHING
NETWORK
OUTPUT
1850
2.5:1
Min
-30
23
25
28
36
VCC=3.4V (nom)
VREF=2.85V (nom)
1850–1910 MHz
50 Ohms I/O
RF OUT
(8)
GND
(3, 6, 7, 9, 11)
2.0:1
24.5
-139
Typ
460
120
-50
-52
-60
-68
25
28
39
10
20
50
4
5
1
1910
Max
10:1
530
-46
-57
-30
-60
16
85
8
5
RMPA1959 Rev. D
dBm/Hz
Units
MHz
dBm
dBm
dBc
dBc
dBc
dBc
dBc
dBc
mA
mA
mA
mA
dB
dB
dB
dB
°C
µA
%
%
%