MSA-0670 Avago Technologies US Inc., MSA-0670 Datasheet - Page 2

• Manufacturer Part Number: MSA-0670
• Description: AMP MMIC SI BIPOLAR 70-MIL PKG
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of MSA-0670

• Gain: 19dB ~ 20.5dB
• Current - Supply: 50mA
• Frequency: 0Hz ~ 4GHz
• Noise Figure: 2.8dB ~ 4dB
• P1db: 2dBm
• Package / Case: 4-SMD (70 mil)
• Test Frequency: 500MHz
• Voltage - Supply: 3.1V ~ 3.9V
• Frequency Range: 0.1GHz To 1.5GHz
• Noise Figure Typ: 2.8dB
• Power Dissipation Pd: 200mW
• Supply Current: 30mA
• Supply Voltage Range: 3.1V To 3.9V
• Rf Type: General Purpose
• Number Of Channels: 1
• Frequency (max): 25GHz
• Output Power: 2@500MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 3.1V
• Single Supply Voltage (typ): 3.5V
• Single Supply Voltage (max): 3.9V
• Package Type: Case 70
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 4
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1962; MSA-0670

MSA-0670 Absolute Maximum Ratings
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 7.7 mW/°C for T
4. The small spot size of this technique results in a higher, though more accurate determination
Electrical Specifications
Note:
1. The recommended operating current range for this device is 12 to 30 mA.

Parameter
Device Current
Power Dissipation
RF Input Power
Junction Temperature
Storage Temperature
Symbol
VSWR
G
∆G
f
NF
P
IP
t
V
dV/dT
3 dB
D
P
1 dB
d
of θ
3
Typical performance as a function of current is on the following page.
CASE
P
jc
than do alternate methods.
= 25°C.
[,3]
Parameters and Test Conditions: I
Power Gain (|S
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50 Ω Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
C
[1]
> 174°C.
, T
A
1
= 25°C
|

)
d
= 16 mA, Z
Absolute Maximum
–65 to 00°C
+13 dBm
00 mW
O
50 mA
00°C
= 50 Ω
f = 0.1 GHz
f = 0.1 to 0.6 GHz
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
[1]
Thermal Resistance
θ
jc
= 130°C/W
mV/°C
Units
dBm
dBm
psec
GHz
dB
dB
dB
V
Min.
19.0
3.1
[2,4]
:
±0.7
1.9:1
1.8:1
Typ.
–8.0
0.5
14.5
00
1.0
.8
.0
3.5
Max.
±1.0
.0
4.0
3.9