RF3375TR7 RFMD, RF3375TR7 Datasheet - Page 2

IC AMP HBT GAAS GEN-PUR SOT-89

RF3375TR7

Manufacturer Part Number
RF3375TR7
Description
IC AMP HBT GAAS GEN-PUR SOT-89
Manufacturer
RFMD
Datasheet

Specifications of RF3375TR7

Current - Supply
65mA ~ 80mA
Frequency
0Hz ~ 6GHz
Gain
12.2dB ~ 13.2dB
Noise Figure
4.6dB
P1db
14.5dBm ~ 16dBm
Package / Case
SOT-89
Rf Type
General Purpose
Test Frequency
2GHz
Voltage - Supply
5.18V ~ 5.36V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
689-1021-2
DRAFT
RF3375
2 of 7
Absolute Maximum Ratings
Input RF Power
Operating Ambient Temperature
Storage Temperature
I
Overall
Frequency Range
3dB Bandwidth
Gain
Noise Figure
Input VSWR
Output VSWR
Output IP
Output P
Reverse Isolation
Thermal
Theta
Maximum Measured Junction
Mean Time to Failures
Power Supply
Device Operating Voltage
Operating Current
Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are not
Note 2: The RF3375 must be operated below 80mA. 60mA to 65mA is the recommended bias to ensure the highest possible reliability and
Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should be
CC
Temperature at DC Bias
Conditions
optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used.
electrical performance.
used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 80mA over all intended operating
conditions.
JC
1dB
3
Parameter
Parameter
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
+28.0
+14.5
Min.
12.2
-60 to +150
-40 to +85
Rating
Specification
+13
80
DC to >6000
<1.9:1
<2.0:1
<1.7:1
+33.9
+30.0
+18.5
+16.0
>100
-18.0
Typ.
12.4
13.5
13.5
13.2
13.2
13.0
142
175
4.6
5.0
7.0
65
6
Max.
Unit
dBm
°C
mA
80
°C
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
°C/W
years
Unit
dBm
dBm
dBm
dBm
MHz
GHz
mA
dB
dB
dB
dB
dB
dB
°C
V
V
Caution! ESD sensitive device.
T=25 °C, I
Freq=500MHz
Freq=1000MHz
Freq=2000MHz
Freq=3000MHz
Freq=4000MHz
Freq=6000MHz
Freq=2000MHz
In a 50 system, DC to 6000MHz
In a 50 system, DC to 500MHz
In a 50 system, 500MHz to 6000MHz
Freq=1000MHz
Freq=2000MHz
Freq=1000MHz
Freq=2000MHz
Freq=2000MHz
I
V
T
T
With 22 bias resistor, T=+25
At pin 8 with I
At Evaluation Board Connector I
See Note 2.
CC
CASE
CASE
PIN
=65mA (See Note 3.)
=5.0V
=+85°C
=+85°C
CC
=65mA (See Note 1.)
CC
DRAFT
=65mA
Condition
o
CC
C
=65mA
DS101122

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