NLB-300T1 RFMD, NLB-300T1 Datasheet - Page 2

IC AMP MMIC GAAS 10GHZ 4-MICROX

NLB-300T1

Manufacturer Part Number
NLB-300T1
Description
IC AMP MMIC GAAS 10GHZ 4-MICROX
Manufacturer
RFMD
Datasheet

Specifications of NLB-300T1

Current - Supply
50mA
Frequency
0Hz ~ 10GHz
Gain
8.5db ~ 8.9dB @ 6GHz ~ 10GHz
Noise Figure
4.9dB @ 3GHz
P1db
14.1dBm @ 6GHz
Package / Case
4-Micro-X
Rf Type
LMDS, VSAT, WLAN, UNII, DWDM, PTP PMP
Voltage - Supply
3.6V ~ 4.2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Test Frequency
-
Other names
689-1003-2
NLB-300TR7
3
NLB-300
3-20
Absolute Maximum Ratings
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Exceeding any one or a combination of these limits may cause permanent
damage.
Overall
Small Signal Power Gain, S21
Gain Flatness, GF
Input VSWR
Output VSWR
Output Power @
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
Gain Temperature Coefficient,
MTTF versus Temperature
@ I
Case Temperature
Junction Temperature
MTTF
Thermal Resistance
θ
JC
CC
-1dB Compression, P1dB
δG
=50mA
T
/δT
Parameter
Parameter
D
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Min.
12.0
8.5
3.6
-65 to +150
-45 to +85
Rating
Specification
+20
300
200
70
>1,000,000
-0.0015
+28.6
+27.0
Typ.
2.2:1
2.8:1
2.0:1
2.2:1
2.9:1
2.4:1
13.0
10.7
12.7
±0.1
11.1
14.1
113
147
8.9
8.9
8.5
4.9
-16
3.8
85
Max.
Unit
dBm
mW
4.2
mA
°C
°C
°C
dB/°C
hours
°C/W
Unit
dBm
dBm
dBm
dBm
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
dB
dB
dB
dB
dB
dB
dB
dB
°C
°C
V
V
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
f=10.0GHz to 12.0GHz
f=5.0GHz to 10.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 7.0GHz
f=7.0GHz to 12.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 7.0GHz
f=7.0GHz to 12.0GHz
f=2.0GHz
f=6.0GHz
f=10.0GHz
f=3.0GHz
f=2.0GHz
f=6.0GHz
f=0.1GHz to 20.0GHz
J
-------------------------- -
D
T
Caution! ESD sensitive device.
V
=+3.8V, I
D
T
CASE
I
CC
CC
=50mA, Z
=
Condition
θ
JC
(
0
°C Watt
=50Ω, T
Rev A10 DS070123
A
=+25°C
)

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