UPC8151TB-E3-A CEL, UPC8151TB-E3-A Datasheet

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UPC8151TB-E3-A

Manufacturer Part Number
UPC8151TB-E3-A
Description
IC MMIC AMPLIFIER SOT-363
Manufacturer
CEL
Type
RF IC'sr
Datasheets

Specifications of UPC8151TB-E3-A

Current - Supply
4.2mA
Frequency
100MHz ~ 1.9GHz
Gain
12.5dB
Noise Figure
6dB
P1db
2.5dBm
Package / Case
SC-70-6, SC-88, SOT-363
Rf Type
PCS, DCS
Test Frequency
1GHz
Voltage - Supply
2.4V ~ 3.3V
Operating Frequency
100 MHz to 900 MHz
Operating Supply Voltage
2.4 V to 3.3 V
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPC8151TB-E3-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
FEATURES
• SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V
• LOW CURRENT CONSUMPTION:
• HIGH EFFICIENCY:
• POWER GAIN:
• OPERATING FREQUENCY:
• EXCELLENT ISOLATION:
• HIGH DENSITY SURFACE MOUNTING:
NEC's UPC8151TB is a silicon RFIC designed as a buffer
amplifier for cellular or cordless telephones. This low current
amplifier operates on 3.0 V and is housed in a 6 pin super
minimold package.
The IC is manufactured using NEC's 20 GHz f
silicon bipolar process. This process uses silicon nitride
passivation film and gold electrodes. These materials protect
the chip surface from external pollution and prevent corrosion/
migration. Thus, this IC has excellent performance, uniformity
and reliability.
DESCRIPTION
SYMBOLS
RL
UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V
UPC8151TB; P
UPC8151TB; G
100 MHz to 1900 MHz (Output port LC matching)
UPC8151TB; ISOL = 38 dB TYP @ f = 1 GHz
6 pin super minimold or SOT-363 package
ISOL
P
RL
IM
NF
Icc
G
1dB
OUT
P
IN
3
Circuit Current, No signal
Power Gain
Output Power at 1 dB Compression Point
Noise Figure
Input Return Loss(without matching circuit)
Output Return Loss (with external matching circuit)
3rd Order Intermodulation Distortion
f
f
Isolation
1
1
= 1.000 GHz, f
= 1.900 GHz, f
CELLULAR/CORDLESS TELEPHONES
1dB
P
PARAMETERS AND CONDITIONS
= 12.5 dB TYP @ f = 1 GHz
= +2.5 dBm TYP @ f = 1 GHz
PACKAGE OUTLINE
2
2
PART NUMBER
LOW CURRENT AMPLIFIER FOR
= 1.001 GHz, P
= 1.901 GHz, P
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
O(each)
O(each)
T
NESAT™ III
(T
= -20 dBm
= -20 dBm
A
= 25 °C, V
CC
= V
OUT
SILICON RFIC
= 3.0 V, Z
UNITS
dBm
dBc
mA
dB
dB
dB
dB
dB
L
= Z
California Eastern Laboratories
+20
+10
-10
+20
+10
-10
0
0
Tuned at 1 GHz
0.3
Tuned at 1.9 GHz
0.3
S
= 50 Ω, at LC matched frequency)
INSERTION POWER GAIN vs.
FREQUENCY AND VOLTAGE
12.0
33.0
29.0
MIN
-1.0
-3.0
2.8
9.5
2.0
1.0
Frequency, f (GHz)
Frequency, f (GHz)
V
CC
V
CC
= 3.3 V
= 3.0 V
1.0
UPC8151TB
1.0
UPC8151TB
V
CC
V
-62.0
SO6
TYP
12.5
15.0
38.0
34.0
+2.5
+0.5
10.0
12.0
CC
= 3.0 V V
4.2
6.0
6.0
5.0
4.0
54.0
= 3.3 V
CC
= 2.4 V
3.0
3.0
MAX
14.5
17.0
5.8
7.5
7.5

Related parts for UPC8151TB-E3-A

UPC8151TB-E3-A Summary of contents

Page 1

... TYP @ GHz P • OPERATING FREQUENCY: 100 MHz to 1900 MHz (Output port LC matching) • EXCELLENT ISOLATION: UPC8151TB; ISOL = 38 dB TYP @ GHz • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package DESCRIPTION NEC's UPC8151TB is a silicon RFIC designed as a buffer amplifier for cellular or cordless telephones. This low current amplifier operates on 3 ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Supply Voltage CC P Total Power Dissipation Operating Temperature A T Storage Temperature STG Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. ...

Page 3

... TYPICAL APPLICATION EXAMPLE Location Examples in Digital Cellular PRODUCT LINE- +25 ° PARAMETER PART NO. Icc (mA) UPC8128TB 2.8 UPC8151TB 4.5 UPC8152TB 5.6 TYPICAL PERFORMANCE CURVES CIRCUIT CURRENT vs. VOLTAGE 6 No Signals Supply Voltage VCO N PLL = 3 Ω OUTPUT PORT MATCHING FREQUENCY 1 GHz 1.9 GHz G ISOL P G ISOL ...

Page 4

TYPICAL PERFORMANCE CURVES 1.0 GHz OUTPUT PORT MATCHING INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE +20 +10 0 -10 -20 -30 -40 -50 0.1 0.3 Frequency, f (GHz) ISOLATION vs. FREQUENCY AND VOLTAGE -30 -40 - 3.0 V ...

Page 5

TYPICAL PERFORMANCE CURVES 1.0 GHz OUTPUT PORT MATCHING OUTPUT RETURN LOSS vs. FREQUENCY AND VOLTAGE +10 0 -10 -20 -30 0.1 1.0 0.3 Frequency, f (GHz) OUTPUT POWER vs. INPUT POWER AND VOLTAGE + ...

Page 6

TYPICAL PERFORMANCE CURVES 1.0 GHz Output Port Matching NOISE FIGURE vs. VOLTAGE 7.5 7.0 6.5 6.0 5.5 5.0 4.5 2.0 2.5 3.0 Voltage, V (V) CC 1.9 GHz Output Port Matching INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE +20 V ...

Page 7

TYPICAL PERFORMANCE CURVES 1.9 GHz Output Port Matching OUTPUT POWER vs. INPUT POWER AND VOLTAGE + 3 -10 -15 -20 -25 -30 -40 -35 -30 -25 -20 -15 Input Power 3RD ...

Page 8

TYPICAL SCATTERING PARAMETERS 3 —Frequency 3 4 OUT CC FREQUENCY S 11 MHz MAG ANG 100 .843 -16.0 200 .752 -27.1 300 .666 -32.4 400 .603 ...

Page 9

... PACKAGE OUTLINE SO6 2.1±0.1 1.25±0.1 2.0±0.2 0.65 1.3 0.65 0.9 ± 0.1 0.7 0 ~0.1 ORDERING INFORMATION PART NUMBER QUANTITY UPC8151TB-E3-A 3K/Reel Note: Embossed tape wide. Pins 1, 2 and 3 face perforated side of tape. TEST CIRCUIT V CC Output Port Match 6 50Ω ...

Page 10

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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