UPC3242TB-E3-A CEL, UPC3242TB-E3-A Datasheet

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UPC3242TB-E3-A

Manufacturer Part Number
UPC3242TB-E3-A
Description
MMIC AMPLIFIER 6 PIN MINIMOLD
Manufacturer
CEL
Datasheet

Specifications of UPC3242TB-E3-A

Current - Supply
4.3mA
Frequency
250MHz ~ 3GHz
Gain
22dB
Noise Figure
4dB
P1db
7.5dBm
Package / Case
6-MINIMOLD
Rf Type
General Purpose
Test Frequency
1GHz
Voltage - Supply
3 V ~ 3.6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document No. PU10803EJ01V0DS (1st edition)
Date Published March 2010 NS
DESCRIPTION
FEATURES
• Low current
• Power gain
• Gain flatness
• Noise figure
• High linearity
• Supply voltage
• Port impedance
APPLICATIONS
• IF amplifiers in DBS LNB, other L-band amplifiers, etc.
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
μ
PC3242TB-E3
The
This device exhibits low noise figure and high power gain characteristics.
This IC is manufactured using our UHSK3 (Ultra High Speed Process) silicon germanium bipolar process.
Remark
Part Number
μ
PC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB.
3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER
To order evaluation samples, please contact your nearby sales office.
Part number for sample order:
μ
PC3242TB-E3-A 6-pin super minimold
Order Number
: I
: G
: G
:
: NF = 4.0 dB TYP. @ f = 1.0 GHz
: NF = 4.0 dB TYP. @ f = 2.2 GHz
: P
: P
: V
: input/output 50 Ω
BIPOLAR ANALOG INTEGRATED CIRCUIT
Δ
(Pb-Free)
CC
G
O (1 dB)
O (1 dB)
CC
P
P
P
= 4.3 mA TYP.
= 22 dB TYP. @ f = 1.0 GHz
= 22 dB TYP. @ f = 2.2 GHz
= +3.0 to +3.6 V
= 0.4 dB TYP. @ f = 1.0 to 2.2 GHz
Package
= −7.5 dBm TYP. @ f = 1.0 GHz
= −9.5 dBm TYP. @ f = 2.2 GHz
μ
PC3242TB
Marking
C3Z
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
μ
PC3242TB
Supplying Form

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UPC3242TB-E3-A Summary of contents

Page 1

BIPOLAR ANALOG INTEGRATED CIRCUIT 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION μ The PC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain ...

Page 2

PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) (Top View PRODUCT LINE- 3.3 V-BIAS SILICON MMIC WIDE BAND AMPLIFIER (T = +25° +5 ...

Page 3

ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V Total Circuit Current I Power Dissipation P Operating Ambient Temperature T Storage Temperature T Input Power P Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED ...

Page 4

ELECTRICAL CHARACTERISTICS (T specified) Parameter Symbol Circuit Current I Power Gain 1 G Power Gain 2 G Power Gain 3 G Power Gain 4 G Gain 1 dB Compression Output Power dB) Gain 1 dB Compression ...

Page 5

TEST CIRCUIT C1 100 pF IN Microstrip Line The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type C1, C2 Chip Capacitor ...

Page 6

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD IN Top View Mounting direction COMPONENT LIST Type C1, C2 Chip Capacitor C3 Chip Capacitor C4 Feed-through Capacitor C4: Feed-through Capacitor Notes 1. 30 × 30 × 0.4 ...

Page 7

TYPICAL CHARACTERISTICS (T CIRCUIT CURRENT vs. SUPPLY VOLTAGE 8 No Input Signal +85° 0.5 1.0 1.5 2.0 2.5 3.0 Supply Voltage V (V) CC POWER GAIN vs. FREQUENCY ...

Page 8

POWER GAIN vs. FREQUENCY –40 dBm –40° +25°C +85° 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ...

Page 9

OUTPUT POWER vs. INPUT POWER – –40°C A –10 +25°C –15 +85°C –20 – 1.0 GHz –30 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power P (dBm) in NOISE FIGURE ...

Page 10

OUTPUT POWER, IM vs. INPUT POWER out –10 –20 –30 – –50 – +3.0 V – 000 MHz – 001 MHz –90 –50 ...

Page 11

OUTPUT POWER, IM vs. INPUT POWER out –10 –20 –30 – –50 – –40°C A – 000 MHz – 001 MHz –90 –50 –45 ...

Page 12

OUTPUT POWER, IM vs. INPUT POWER out –10 – –30 –40 – – 000 MHz 001 MHz –70 –55 –50 –45 –40 –35 –30 –25 ...

Page 13

OUTPUT POWER, IM vs. INPUT POWER out –10 – –30 –40 – –40°C A – 000 MHz 001 MHz –70 –55 –50 –45 –40 –35 ...

Page 14

OUTPUT POWER, 2f vs. INPUT POWER out –10 –20 – –40 –50 V – 000 MHz –70 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power P ...

Page 15

S-PARAMETERS (T = +25° −FREQUENCY S 11 START : 100 MHz −FREQUENCY S 22 START : 100 MHz Remarks 1. Measured on the test circuit of evaluation board. 2. The graphs indicate nominal characteristics. = −40 dBm) ...

Page 16

... S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. → [Device Parameters] [RF and Microwave] URL http://www.necel.com/microwave/en/ 16 Data Sheet PU10803EJ01V0DS μ PC3242TB ...

Page 17

PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 0.1 MIN. Data Sheet PU10803EJ01V0DS μ PC3242TB 17 ...

Page 18

NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with ...

Page 19

The information in this document is current as of March, 2010. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of ...

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