RF3863TR7 RFMD, RF3863TR7 Datasheet - Page 2

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RF3863TR7

Manufacturer Part Number
RF3863TR7
Description
IC AMP LOW-NOISE 16-QFN
Manufacturer
RFMD
Datasheet

Specifications of RF3863TR7

Current - Supply
90mA ~ 110mA
Frequency
380MHz ~ 3.8GHz
Gain
10dB
Noise Figure
0.9dB
P1db
22dBm
Package / Case
16-QFN
Rf Type
Cellular, CDMA, PCS, DCS, UMTS, WLAN, 802.16/WiMax
Test Frequency
3.3GHz ~ 3.8GHz
Voltage - Supply
2.5V ~ 6V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RF3863TR7
Manufacturer:
RFMD
Quantity:
5 000
RF3863
2 of 8
Absolute Maximum Ratings
Supply Voltage
Input RF Level
Current Drain, I
Operating Ambient Temperature
Storage Temperature
Note 1: Max continuous RF IN is +10dBm. The max transient RF IN is
High Band
Frequency
Current
Gain
Noise Figure
OIP3
OP1dB
S11
S22
Mid Band
Frequency
Current
Gain
Noise Figure
OIP3
OP1dB
S11
S22
Low Band
Frequency
Current
Gain
Noise Figure
OIP3
OP1dB
S11
S22
Thermal
Theta
Power Supply
Device Operating Voltage
Operating Current
+20dBm.
JC
Parameter
Parameter
DD
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Min.
33.0
21.0
700
3.3
1.5
2.5
65
14
-40 to +150
-40 to +85
Rating
Specification
150
+10
6
Typ.
22.0
35.5
22.5
37.0
0.9
-11
-18
0.8
-10
0.9
-10
5.0
-17
-17
90
10
90
15
90
18
35
22
51
90
Max.
Unit
1100
25.0
dBm
16.5
110
110
110
110
6.0
mA
3.8
2.7
1.0
°C
°C
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
°C/W
Unit
dBm
dBm
dBm
dBm
dBm
dBm
MHz
GHz
GHz
mA
mA
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
V
Caution! ESD sensitive device.
V
+25°C, V
unless specified
f
V
+25°C, V
specified
f
V
+25°C, V
specified
f
V
1
1
1
DD
DD
DD
DD
=3500MHz, f
=2000MHz, f
=850MHz, f
=5V
=5V
=5V
=5.0V, R2=open
DD
DD
DD
=5V, I
=5V, I
=5V, I
2
2
2
=851MHz
=3501MHz
=2001MHz
Condition
DD
DD
DD
=90mA, 2000MHz unless
=90mA, 3500MHz
=90mA, 850MHz unless
DS100113

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