UPD5702TU-A CEL, UPD5702TU-A Datasheet

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UPD5702TU-A

Manufacturer Part Number
UPD5702TU-A
Description
IC PWR AMP 2.4GHZ 8-L2MM
Manufacturer
CEL
Datasheet
1.UPD5702TU-E2-A.pdf (10 pages)

Specifications of UPD5702TU-A

Current - Supply
150mA
Frequency
1.9GHz ~ 2.4GHz
Package / Case
8-MINIMOLD
Rf Type
802.15.1/Bluetooth, PHS
Voltage - Supply
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure
-
P1db
-
Test Frequency
-
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
Document No. PU10455EJ01V0DS (1st edition)
Date Published November 2003 CP(K)
DESCRIPTION
and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin
L2MM (Lead Less Mini Mold) plastic package.
FEATURES
• Output Power
• Single Supply voltage
• Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.
APPLICATIONS
•
• 2.4 GHz applications (Example : Wireless LAN etc.)
ORDERING INFORMATION (Pb-Free)
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
µ
PD5702TU-E2-A
Remark To order evaluation samples, contact your nearby sales office.
1.9 GHz applications (Example : PHS etc.)
The
Part Number
µ
PD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS
Part number for sample order:
8-pin L
FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS
ead-Less Minimold
Package
Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT
: P
: P
: V
out
out
DS
= +21 dBm MIN. @P
= +21 dBm MIN. @P
= 3.0 V TYP.
µ
PD5702TU-A
Marking
5702
in
in
= −5 dBm, f = 1.9 GHz, V
= +2 dBm, f = 2.45 GHz, V
• 8 mm wide embossed taping
• Pin 5, 6, 7, 8 indicates pull-out direction of tape
• Qty 5 kpcs/reel
µ
Supplying Form
PD5702TU
©
DS
NEC Compound Semiconductor Devices 2003
DS
= 3.0 V
= 3.0 V

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UPD5702TU-A Summary of contents

Page 1

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION µ The PD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power ...

Page 2

PIN CONNECTION AND INTERNAL BLOCK DIAGRAM P P GND P 2 (Top View out2 in2 out2 in2 GND in1 out1 Preliminary Data Sheet PU10455EJ01V0DS µ PD5702TU ...

Page 3

ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain to Source Voltage V DS Gate to Source Voltage V GS Drain Current ds1 Drain Current ds2 Total Power Dissipation P D Channel Temperature T ch Storage Temperature ...

Page 4

ELECTRICAL CHARACTERISTICS (f = 2.4 GHz +25°C, unless otherwise specified, using our standard test fixture.) A Parameter Symbol Gate to Source Voltage V GS Power Added Efficiency PAE Note Drain Current I DS ...

Page 5

TYPICAL CHARACTERISTICS (Preliminary 1.9 GHz OUTPUT POWER vs. INPUT POWER –5 –15 –10 –5 0 Input Power P (dBm) ...

Page 6

ADJACENT CHANNEL POWER = −5 dBm 1.9 GHz ATTEN 20 dB MKR –71. 5.0 dBm 10 dB/ 600 kHz D Center 1.900 GHz Span 2.000 MHz VBW 3.0 ...

Page 7

TYPICAL CHARACTERISTICS (Preliminary 2.4 GHz OUTPUT POWER vs. INPUT POWER –5 –15 –10 –5 0 Input Power P (dBm) ...

Page 8

PACKAGE DIMENSIONS 8-PIN LEAD-LESS MINIMOLD (UNIT: mm) (Top View 5702 2.0 8 (Bottom View 0.25 0.25 0. Preliminary Data Sheet PU10455EJ01V0DS µ PD5702TU 7 8 0.16 0.75 2 ...

Page 9

RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Peak temperature (package surface temperature) Time at peak ...

Page 10

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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