RF2132TR7 RFMD, RF2132TR7 Datasheet

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RF2132TR7

Manufacturer Part Number
RF2132TR7
Description
IC LINEAR POWER AMP 16-SOIC
Manufacturer
RFMD
Datasheet

Specifications of RF2132TR7

Current - Supply
40mA ~ 100mA
Frequency
800MHz ~ 950MHz
Gain
27dB ~ 31dB
Package / Case
16-SOIC
Rf Type
AMPS, CDMA, JCDMA, TACS
Voltage - Supply
4.2V ~ 5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
P1db
-
Test Frequency
-
Product Description
The RF2132 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in dual-mode 4-cell CDMA/AMPS handheld digi-
tal cellular equipment, spread-spectrum systems, and
other applications in the 800MHz to 950MHz band. The
device is self-contained with 50Ω input and the output
can be easily matched to obtain optimum power, effi-
ciency, and linearity characteristics over varying supply
and control voltages.
Optimum Technology Matching® Applied
Rev B10 060908
Typical Applications
• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Handsets
• 4.8V JCDMA/TACS Handsets
Si BJT
Si Bi-CMOS
InGaP/HBT
RF IN
GND
GND
GND
GND
VCC
NC
PC
Functional Block Diagram
1
2
3
4
5
6
7
8
RoHS Compliant & Pb-Free Product
GaAs HBT
SiGe HBT
GaN HEMT
BIAS
0
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
16
15
14
13
12
11
10
9
GND
RF OUT
RF OUT
GND
GND
RF OUT
RF OUT
GND
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment
Features
Ordering Information
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• Single 4.2V to 5.0V Supply
• Up to 29 dBm Linear Output Power
• 29dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation
RF2132
RF2132PCBA-41X Fully Assembled Evaluation Board
Package Style: Standard Batwing
8° MAX
0° MIN
0.392
0.386
Linear Power Amplifier
0.035
0.016
0.158
0.150
0.244
0.230
LINEAR POWER AMPLIFIER
0.010
0.008
0.021
0.014
0.069
0.064
0.060
0.054
RF2132
http://www.rfmd.com
Fax (336) 664 0454
Tel (336) 664 1233
-A-
0.009
0.004
0.050
2-109

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RF2132TR7 Summary of contents

Page 1

... Thorndike Road Greensboro, NC 27409, USA RF2132 LINEAR POWER AMPLIFIER -A- 0.009 0.158 0.004 0.150 0.021 0.014 0.069 0.392 0.064 0.386 0.050 0.244 0.060 0.230 0.054 0.010 0.035 0.008 0.016 Linear Power Amplifier Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-109 ...

Page 2

RF2132 Absolute Maximum Ratings Parameter Supply Voltage (No RF) Supply Voltage (P <32dBm) OUT Power Control Voltage ( Supply Current Input RF Power Output Load VSWR Storage Temperature Junction Temperature Parameter Min. Overall Usable Frequency Range Linear ...

Page 3

Pin Function Description 1 VCC1 Power supply for the driver stage, and interstage matching. Shunt inductance is required on this pin, which can be achieved by an induc- tor the inductor is frequency dependent; 3.3nH is required ...

Page 4

... RF2132 Vcc = 4.8 V Vpc = 4.0 V 100 pF 100 Ω Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1-1 L1 1.8 nH Interstage tuning (L1) for centering output frequency C6 100 Adds bias to the first Ω amplifier stage for improved linearity P1-3 C12 C13 C14 3.3 μF ...

Page 5

Rev B10 060908 Evaluation Board Layout 2” x 2” RF2132 2-113 ...

Page 6

RF2132 Vcc = 4.8 V, Vpc = 4.0 V, Frequency = 836 MHz, IS-95A CDMA 2-114 RF2132 Evaluation Board ACPR 1.98 MHz ACPR 885 kHz Current Total Efficiency ...

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