ALM-1222-TR1G Avago Technologies US Inc., ALM-1222-TR1G Datasheet - Page 2

• Manufacturer Part Number: ALM-1222-TR1G
• Description: IC AMP VERY LO NOISE 5X6MM 22LD
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of ALM-1222-TR1G

• Rf Type: Cellular, CDMA, W-CDMA, PCS, EGSM
• Gain: 29.5dB ~ 32.5dB
• Current - Supply: 280mA
• Frequency: 1.8GHz ~ 2.2GHz
• Noise Figure: 0.62dB
• P1db: 27.5dBm
• Package / Case: 22-MCOB
• Test Frequency: 2GHz
• Voltage - Supply: 1.9V ~ 2.8V
• Frequency Rf: 2.2GHz
• Noise Figure Typ: 0.62dB
• Supply Current: 280mA
• Power Dissipation Pd: 5W
• Frequency Max: 2.2GHz
• Termination Type: SMD
• Frequency Min: 1.8GHz
• Frequency (max): 2.2GHz
• Power Supply Requirement: Dual
• Single Supply Voltage (min): Not RequiredV
• Single Supply Voltage (typ): Not RequiredV
• Single Supply Voltage (max): Not RequiredV
• Package Type: MCOB
• Dual Supply Voltage (min): 1.9V
• Dual Supply Voltage (typ): 2.3/5V
• Dual Supply Voltage (max): 2.8V
• Pin Count: 22
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Absolute Maximum Rating
Product Consistency Distribution Charts
Note:
5. Distribution data sample size is 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
6. Measurements are made on a production test board, which can show a variance of up to 1dB in gain and OIP3 compared to a soldered-down
2
Symbol
Vdd
Vctrl
Pin,max
Pdiss
T
T
j
STG
150
120
nominal values anywhere between the upper and lower limits.
demo board. Input trace losses have been de-embedded from actual measurements.
150
120
90
60
30
90
60
30
0
0
Figure 1. NF@ 2.0GHz; 5V, 280mA
Figure 3. OIP3@ 2.0GHz; 5V, 280mA
Process Capability for NF
0.5
Process Capability for OIP3
38
Nominal = 0.62, USL = 1.0
Parameter
Device Voltage, RF output to ground
Control Voltage
CW RF Input Power
(Vdd = 5.0, Idd=280mA)
Total Power Dissipation
Junction Temperature
Storage Temperature
LSL = 39.0, Nominal = 43.7
0.55
40
0.6
42
OIP3 (dBm)
[2]
NF (dB)
T
A
=25
0.65
44
[4]
o
C
Std dev=0.014
[5,6]
Std dev=0.93
0.7
46
CPK=1.6
CPK>2
Units
V
V
dBm
W
o
o
C
C
0.75
48
Absolute Max.
5.5
3.0
22
5
150
-65 to 150
500
400
300
200
100
200
160
120
80
40
0
0
Figure 2. Gain @ 2.0GHz; 5V, 280mA
Figure 4. Vctrl @ 2.0GHz; 5V, 280mA
28.5 29 29.5 30 30.5 31 31.5 32 32.5 33
Process Capability for Gain
1.8
Process Capability for Vctrl
LSL = 1.9, Nominal = 2.3, USL = 2.8
LSL = 29.5, Nominal = 31.0
2
Thermal Resistance
Vctrl=2.2V)qjc = 20
Notes:
2.
3.
4.
Operation of this device in ex-
cess of any of these limits may
cause permanent damage.
Thermal resistance measured
using Infra-Red measurement
technique.
Board (module belly) tempera-
ture T
Derate 50mW/
2.2
Gain (dB)
Vctrl (V)
B
is 25
2.4
o
Std dev = 0.07
CPK_U = 2.1
C.
CPK_L = 2.0
o
Std dev=0.35
[3]
C for T
o
C/W
CPK=1.45
(Vdd = 5.0V,
2.6
B
>95
o
2.8
C.