MSA-0420 Avago Technologies US Inc., MSA-0420 Datasheet - Page 2

• Manufacturer Part Number: MSA-0420
• Description: AMP MMIC SI BIPOLAR 200-MIL BEO
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of MSA-0420

• Gain: 7.5dB ~ 9.5dB
• Rf Type: ISM
• Current - Supply: 30mA ~ 110mA
• Frequency: 0Hz ~ 4GHz
• Noise Figure: 6.5dB
• P1db: 14dBm ~ 16Bm
• Package / Case: 4-SMD (200 mil BeO)
• Test Frequency: 1GHz
• Voltage - Supply: 5.7V ~ 6.9V
• Frequency Range: 0.1GHz To 2.5GHz
• Noise Figure Typ: 6.5dB
• Power Dissipation Pd: 850mW
• Supply Current: 110mA
• Supply Voltage Range: 5.7V To 6.9V
• Number Of Channels: 1
• Frequency (max): 4GHz
• Output Power: 16@1000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 5.7V
• Single Supply Voltage (typ): 6.3V
• Single Supply Voltage (max): 6.9V
• Package Type: BeO
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 4
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

MSA-0420 Absolute Maximum Ratings
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 25 mW/°C for T
4. The small spot size of this technique results in a higher, though more accurate determination
Electrical Specifications
Note:
1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current is on the following

Parameter
Device Current
Power Dissipation
RF Input Power
Junction Temperature
Storage Temperature
Symbol
VSWR
G
∆G
f
NF
P
IP
t
V
dV/dT
3 dB
D
1 dB
d
P
3
of q
page.
CASE
P
jc
than do alternate methods.
= 25°C.
[,3]
Parameters and Test Conditions: I
Power Gain (|S
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50 Ω Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
C
[1]
> 166°C.
, T
1
A
|
= 25°C

)
d
= 90 mA, Z
Absolute Maximum
–65 to 00°C
+13 dBm
850 mW
10 mA
O
00°C
= 50 Ω
f = 0.1 GHz
f = 0.1 to .5 GHz
f = 0.1 to .5 GHz
f = 0.1 to .5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
[1]
Thermal Resistance
θ
jc
= 40°C/W
Units
mV/°C
dBm
dBm
psec
GHz
dB
dB
dB
V
Min.
14.0
[2,4]
7.5
5.7
:
Typ.
±0.6
1.7:1
1.8:1
–8.0
16.0
30.0
140
8.5
4.3
6.5
6.3
Max.
±1.0
9.5
6.9